Year: 1987
Type: article
Abstract: Infrared absorption lines observed at low temperatures in Zn-doped GaAs epilayers passivated with hydrogen and deuterium are ascribed to As-H and As-D stretching modes where the As atom involved is the first neighbour of the Zn acceptor. This attribution is shown to be consistent with a model for hydrogen passivation of acceptors on gallium sites in GaAs.
Authors: B Pajot, A Jalil, J Chevallier, R Azoulay
Institution: Université Paris Diderot
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2000208878