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Tung‐Yen Lai

Observed names: T. Y. Lai, Tung-Yen Lai
OpenAlex ID: A5111472662
Utilizing Sub-5 nm sidewall electrode technology for atomic-scale resistive memory fabrication
2014 · Kai-Shin Li, ChiaHua Ho, et al. · Symposium on VLSI Technology · 45
First demonstration of 40-nm channel length top-gate WS2 pFET using channel area-selective CVD growth directly on SiOx/Si substrate
2019 · Chao-Ching Cheng, Yun-Yan Chung, et al. · Symposium on VLSI Technology · 37
Non-Faradaic Electrical Impedimetric Investigation of the Interfacial Effects of Neuronal Cell Growth and Differentiation on Silicon Nanowire Transistors
2015 · Shu-Ping Lin, Lester U. Vinzons, et al. · ACS Applied Materials & Interfaces · 27
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Bonding Mechanisms of Roughened Nanotwinned-Cu Surface at Temperature as Low as 120 °C
2020 · YewChung Sermon Wu, Tung-Yen Lai, et al. · ECS Journal of Solid State Science and Technology · 25
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Threshold Vacuum Switch (TVS) on 3D-stackable and 4F2 cross-point bipolar and unipolar resistive random access memory
2012 · ChiaHua Ho, Hsin-Hau Huang, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 25
Investigation into the Effect of Varied Functional Biointerfaces on Silicon Nanowire MOSFETs
2012 · Shu-Ping Lin, Tien-Yin Chi, et al. · Sensors · 18
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Effect of Nanotwin Boundary on the Cu–Cu Bonding
2021 · Tsan-Feng Lu, Tung-Yen Lai, et al. · ECS Journal of Solid State Science and Technology · 15
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Study of sub-5 nm RRAM, tunneling selector and selector less device
2015 · Kai-Shin Li, Ming-Taou Lee, et al. · IEEE International Symposium on Circuits and Systems proceedings · 13
Demonstration of 40-nm Channel Length Top-Gate p-MOSFET of WS2 Channel Directly Grown on SiO$_{{x}}$ /Si Substrates Using Area-Selective CVD Technology
2019 · Yun-Yan Chung, Jia-Min Shieh, et al. · IEEE Transactions on Electron Devices · 11
Evolution Kinetics of Voids in Electroplated Cu-Cu Wafer Bonding
2021 · Tung-Yen Lai, Meiyi Li, et al. · ECS Journal of Solid State Science and Technology · 7
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Effect of Compressive Stress on Evolution and Healing Kinetics of Artificial Voids in Highly (111)-Oriented Cu-Cu Wafer Bonding at 300 °C
2021 · YewChung Sermon Wu, Meiyi Li, et al. · ECS Journal of Solid State Science and Technology · 7
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Interpretation of biosensing technology in cell-coupled silicon nanowire transistors via impedance spectra
2021 · Lester U. Vinzons, Akhilesh Kumar Gupta, et al. · Materials Letters · 2
Impedimetric investigation of dual electrical properties of reduced graphene-oxide-based biosensors in the detection of dopamine
2017 · Shu-Ping Lin, Jhong-Yi Ciou, et al. · Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC) · 2
Design theory and fabrication process of 90nm unipolar-CMOS
2010 · Jyi-Tsong Lin, Hsuan-Hsu Chen, et al. · Silicon Nanoelectronics Workshop (SNW) · 2
High sensitivity DNA sieving technology by entropic trapping in 3D artificial nano-channel matrices
2013 · Chung-Hsuan Wang, Cho-Lun Hsu, et al. · IEEE International Conference on Micro Electro Mechanical Systems (MEMS) · 1
The effect of varied functional biointerfaces on the sensitivity of silicon nanowire MOSFET
2012 · Shu-Ping Lin, Tien-Yin Chi, et al. · IEEE-EMBS Conference on Biomedical Engineering and Sciences · 1
Research of Nano‐Scaled Transition Metal Oxide Resistive Non‐Volatile Memory (R‐RAM)
2014 · ChiaHua Ho, Cho‐Lun Hsu, et al. · Ceramic transactions /Ceramic transactions
A unipolar-CMOS with recessed source/drain load
2011 · Jyi-Tsong Lin, Hsuan-Hsu Chen, et al. · IEEE International Conference on ASIC (ASICON)
Works count: 18
Citation count: 238
H-index: 9
I10-index: 9
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