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Utilizing Sub-5 nm sidewall electrode technology for atomic-scale resistive memory fabrication

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Year: 2014
Type: conference-paper
Source: Symposium on VLSI Technology
DOI: 10.1109/vlsit.2014.6894402
Authors: Kai-Shin Li, ChiaHua Ho, Ming-Taou Lee, Min-Cheng Chen, Cho-Lun Hsu, J. M. Lu, C. H. Lin, C. C. Chen, B. W. Wu, Y. F. Hou, C. Yi. Lin, Y. J. Chen, T. Y. Lai, M. Y. Li, I. Yang, C. S. Wu, Fu-Liang Yang
Institutions: National Institutes of Applied Research, Winbond (Taiwan), Research Center for Applied Science, Academia Sinica, Academia Sinica
Language: English

Topic: Advanced Memory and Neural Computing
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed
OpenAlex ID: W2073449168
FWCI: 6.022
Cites:
Cited by: 45
Related to: 10
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