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R. Rai

Observed names: R Rai, R.S. Rai
OpenAlex ID: A5111476481
Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I
2004 · C.C. Hobbs, L.R.C. Fonseca, et al. · IEEE Transactions on Electron Devices · 231
Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II
2004 · C.C. Hobbs, L.R.C. Fonseca, et al. · IEEE Transactions on Electron Devices · 181
Fermi level pinning at the polySi/metal oxide interface
2004 · C. Hobbs, L. Fonseca, et al. · Symposium on VLSI Technology · 119
CMOS Vertical Multiple Independent Gate Field Effect Transistor (MIGFET)
2005 · L. Mathew, Y. Du, et al. · IEEE International SOI Conference (SOI) · 86
Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics
2002 · D. C. Gilmer, R. Hegde, et al. · Applied Physics Letters · 80
Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition
2005 · D. H. Triyoso, R. I. Hegde, et al. · Journal of Applied Physics · 79
Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments
2004 · D. H. Triyoso, R. I. Hegde, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 69
HfO[sub 2] Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium
2003 · J. Schaeffer, N. V. Edwards, et al. · Journal of The Electrochemical Society · 61
Characteristics of atomic-layer-deposited thin HfxZr1−xO2 gate dielectrics
2007 · D. H. Triyoso, R. I. Hegde, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 52
Multiple independent gate field effect transistor (MIGFET) - multi-fin RF mixer architecture, three independent gates (MIGFET-T) operation and temperature characteristics
2005 · L. Mathew, Y. Du, et al. · Symposium on VLSI Technology · 35
Performance and Variability Comparisons between Multi-Gate FETs and Planar SOI Transistors
2006 · A. V-Y Thean, Z-H Shi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 33
Characteristics of Mixed Oxides and Nanolaminates of Atomic Layer Deposited HfO[sub 2]–TiO[sub 2] Gate Dielectrics
2006 · D. H. Triyoso, R. I. Hegde, et al. · Journal of The Electrochemical Society · 28
Mixed-signal performance of sub-100nm fully-depleted SOI devices with metal gate, high K (HfO/sub 2/) dielectric and elevated source/drain extensions
2004 · A. Vandooren, A.V.Y. Thean, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 27
Compatibility of silicon gates with hafnium-based gate dielectrics
2003 · D.C. Gilmer, R. Hegde, et al. · Microelectronic Engineering · 26
Embedded SiGe S/D PMOS on thin body SOI substrate with drive current enhancement
2005 · D. Zhang, B.Y. Nguyen, et al. · Symposium on VLSI Technology · 25
80 nm poly-Si gate CMOS with HfO/sub 2/ gate dielectric
2002 · C. Hobbs, H. Tseng, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 23
Microstructure modified HfO/sub 2/ using Zr addition with Ta/sub x/ C/sub y/ gate for improved device performance and reliability
2006 · R.I. Hegde, D.H. Triyoso, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 12
Performance and reliability of sub-100nm TaSiN metal gate fully-depleted SOI devices with high-k (HfO/sub 2/) gate dielectric
2004 · A.V.-Y. Thean, A. Vandooren, et al. · Symposium on VLSI Technology · 7
Sub-quarter micron Si-gate CMOS with ZrO/sub 2/ gate dielectric
2002 · C. Hobbs, L. Dip, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 7
Evaluation of Candidate Metals for Dual-Metal Gate CMOS with HfO2 Gate Dielectric
2002 · S.B. Samavedam, J.K. Schaeffer, et al. · MRS Proceedings · 7
Uniaxial and Biaxial Strain for CMOS Performance Enhancement
2006 · B-Y. Nguyen, D. Zhang, et al. · 2006 International SiGe Technology and Device Meeting · 3
Angled Plan View FIB Sample Preparation for Accurate via Sidewall Measurements
2001 · J Conner, L Prabhu, et al. · Microscopy and Microanalysis · 3
Integration challenges of new materials and device architectures for IC applications
2004 · Bich-Yen Nguyen, A. Thean, et al. · IEEE International Conference on IC Design and Technology (ICICDT) · 2
Characterization of InGaAs/ALGaAs/GaAs heteroepitaxial structures by transmission electron microscopy and energy dispersive spectroscopy
1993 · R.S. Rai, J.M. Tartaglia, et al. · Progress in Crystal Growth and Characterization of Materials · 2
ITFET: Inverted T Channel FET, A Novel Device architecture and circuits based on the ITFET
2006 · L. Mathew, M. Sadd, et al. · IEEE International Conference on IC Design and Technology (ICICDT) · 1
Works count: 28
Citation count: 1,200
H-index: 16
I10-index: 17
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