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Katsuhiko Furukawa

Observed name: Katsuhiko FURUKAWA
Institution: Kyushu University
OpenAlex ID: A5111527599
2,2',4,4',6,6'-Hexabromodiphenylcarbene. The First Stable Triplet Carbene in Fluid Solution at Low Temperature and in the Crystal State at Room Temperature
1995 · Hideo Tomioka, Tetsuya Watanabe, et al. · Journal of the American Chemical Society · 72
Observation of Si cluster formation in SiO2 films through annealing process using x-ray photoelectron spectroscopy and infrared techniques
1998 · Katsuhiko Furukawa, Yichun Liu, et al. · Applied Physics Letters · 33
Molecular Design, Synthesis, and Electron Spin Resonance Detection of a Ground-State Tridecet (S=6) Hydrocarbon as a Model for 2D Organic Ferro- and Superpara-Magnets
1993 · Katsuhiko Furukawa, Takako Matsumura, et al. · Molecular crystals and liquid crystals science technology. Section A, Molecular crystals and liquid crystals/Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals · 21
Characterization of H–Y zeolite modified by a radio-frequency CF4 plasma
2000 · Katsuhiko Furukawa, Shu Rong Tian, et al. · Chemical Physics Letters · 14
An ESR and MO Study of Stable Triplet Diphenylmethylene with Perpendicular Conformations
1995 · Katsuhiko Furukawa, Yoshio Teki, et al. · Molecular crystals and liquid crystals science technology. Section A, Molecular crystals and liquid crystals/Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals · 10
Growth of Epitaxial Silicon Film at Low Temperature by Using Sputtering-Type Electron Cyclotron Resonance Plasma
1999 · Junsi Gao, Hiroshi Nakashima, et al. · Japanese Journal of Applied Physics · 9
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In situ FT-IR reflective absorption spectroscopy for characterization of SiO2 thin films deposited using sputtering-type electron cyclotron resonance microwave plasma
1997 · Katsuhiko Furukawa, Yichun Liu, et al. · Applied Surface Science · 9
Electrical characteristics of p–n junction diodes fabricated by Si epitaxy at low temperature using sputtering-type electron cyclotron resonance plasma
2001 · Junli Wang, Hiroshi Nakashima, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 8
Optimum Discharge Condition of DC Bias Electron Cyclotron Resonance Plasma Sputtering for High Quality Si Epitaxial Growth
2000 · Junsi Gao, Hiroshi Nakashima, et al. · Japanese Journal of Applied Physics · 6
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Effects of oxygen content on properties of silicon oxide films prepared at room temperature by sputtering-type electron cyclotron resonance plasma
1998 · Katsuhiko Furukawa, Yichun Liu, et al. · Journal of Applied Physics · 6
Effect of Substrate Bias on Si Epitaxial Growth Using Sputtering-Type Electron Cyclotron Resonance (ECR) Plasma
1999 · Junsi Gao, Hiroshi Nakashima, et al. · Japanese Journal of Applied Physics · 5
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Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma
1999 · Dawei Gao, Katsuhiko Furukawa, et al. · Japanese Journal of Applied Physics · 5
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Study of the effects of discharge conditions and substrate temperature on Si epitaxial deposition using sputtering-type electron cyclotron resonance plasma
2000 · Junsi Gao, Junli Wang, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 4
Activation of Electrode Surface on Silicon Solar Cell Using Dielectric Barrier Discharge
2004 · Tatsuya Sakoda, Kunihiro Matsukuma, et al. · Japanese Journal of Applied Physics · 3
Electronic and Molecular Structures of Room-Temperature Stable Triplet Carbene as Studied by ESR and X-Ray Crystal Analysis of the Diazo Precursor
1996 · Takeji Takui, Katsuhiko Furukawa, et al. · Molecular crystals and liquid crystals science technology. Section A, Molecular crystals and liquid crystals/Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals · 3
Deposition of High-Quality Silicon Oxynitride Film at Low Temperature by Using a Sputtering-Type Electron Cyclotron Resonance Plasma
1997 · Da-Wei Gao, Yasuhiro Kashiwazaki, et al. · Japanese Journal of Applied Physics · 2
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Electronic and Molecular Structure of Room-Temperature Stable Triplet Carbene as Studied by ESR Spectroscopy
1996 · Katsuhiko Furukawa, Takeji Takui, et al. · Molecular crystals and liquid crystals science technology. Section A, Molecular crystals and liquid crystals/Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals · 2
Room-Temperature Stable Ground-State Triplet Carbene as Models for Organic High-Spin Units with Robust π-Spin Polarization; Esr Study and X-Ray Analysis
1997 · Katsuhiko Furukawa, Takeji Takui, et al. · Molecular crystals and liquid crystals science technology. Section A, Molecular crystals and liquid crystals/Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals · 1
Records and information management in university in industry-university collaboration
2008 · Katsuhiko FURUKAWA, Masahiro ASECHI, et al. · Journal of Information Processing and Management
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Verification of preoxidation effect on deposition of thin gate-quality silicon oxide films at low temperature by a sputtering-type ECR microwave plasma
2000 · Katsuhiko Furukawa, Dawei Gao, et al. · Materials Science and Engineering B
Works count: 20
Citation count: 213
H-index: 8
I10-index: 5
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