Room Temperature Deposition of Silicon Nitride Films for Passivation of Organic Electroluminescence Device Using a Sputtering-Type Electron Cyclotron Resonance Plasma
Year: 1999
Type: article
Abstract: Dense silicon nitride (SiN) films were deposited at room temperature by a sputtering technique using an electron cyclotron resonance (ECR) plasma. Film properties were studied using ellipsometry, chemical etching, Fourier transform infrared spectroscopy, and thermal desorption spectroscopy. A SiN film deposited under the optimum condition of nitrogen gas flow rate had a refractive index of 2.03 and showed a large Si–N bond number. The SiN film had a high barrier against moisture penetration relative to SiN films prepared by chemical vapor deposition at 900°C. This indicates that the film deposited using a sputtering-type ECR plasma has the potential to be utilized as a passivation layer of devices such as organic electroluminescence, which require low temperature processing.
DOI: 10.1143/jjap.38.4868
Authors: Dawei Gao, Katsuhiko Furukawa, HiroshiNakashima Gao, Junli Wang, Katsunori Muraoka
Institution: Kyushu University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1993359360