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Li-Wei Tu

Thermal annealing effect on material characterizations of β-Ga2O3 epilayer grown by metal organic chemical vapor deposition
2013 · Chiung-Yi Huang, Ray-Hua Horng, et al. · Applied Physics Letters · 84
Micro-Raman spectroscopy of a single freestanding GaN nanorod grown by molecular beam epitaxy
2007 · Ching-Lien Hsiao, Li-Wei Tu, et al. · Applied Physics Letters · 60
Growth of n-type heteroepitaxial films of gray tin on (001) CdTe by molecular beam epitaxy
1989 · Li-Wei Tu, George K. Wong, et al. · Applied Physics Letters · 36
Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors
2007 · Ching-Lien Hsiao, Hsu-Cheng Hsu, et al. · Applied Physics Letters · 33
Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric
2016 · Shu-Ju Tsai, Chiang-Lun Wang, et al. · Scientific Reports · 29
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Observation of quantum size effect in the resistivity of thin, gray tin epilayers
1989 · Li-Wei Tu, George K. Wong, et al. · Applied Physics Letters · 27
Robustness of a Topologically Protected Surface State in a Sb2Te2Se Single Crystal
2016 · Chao-Kuei Lee, Cheng-Maw Cheng, et al. · Scientific Reports · 21
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Type II GaSb quantum ring solar cells under concentrated sunlight
2014 · Che-Pin Tsai, Shun-Chieh Hsu, et al. · Optics Express · 20
Epitaxy of obliquely aligned GaN nanorods on vertically oriented graphene nanosheets for transparent flexible piezoelectric nanogenerators
2018 · Shu-Ju Tsai, Chung-Lin Wu, et al. · Carbon · 17
Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure
2009 · Hsin-Hsiung Huang, Chu-Li Chao, et al. · Journal of Crystal Growth · 17
Topological Proximity-Induced Dirac Fermion in Two-Dimensional Antimonene
2021 · Shu Hsuan Su, Pei-Yu Chuang, et al. · ACS Nano · 15
Transparent conductive metal-oxide contacts in vertical-injection top-emitting quantum well lasers
1991 · Li-Wei Tu, E. Fred Schubert, et al. · Applied Physics Letters · 14
Conversion Efficiency Improvement of InGaN/GaN Multiple-Quantum-Well Solar Cells With Ex Situ AlN Nucleation Layer
2015 · Chun-Ta Yu, Wei-Chih Lai, et al. · IEEE Transactions on Electron Devices · 11
m -plane (101̱0) InN heteroepitaxied on (100)-γ-LiAlO2 substrate: Growth orientation control and characterization of structural and optical anisotropy
2010 · Ching-Lien Hsiao, Jr-Tai Chen, et al. · Journal of Applied Physics · 11
Scanning tunneling microscopy and spectroscopy of the electronic structure of dislocations in GaN/Si(111) grown by molecular-beam epitaxy
2010 · Ya-Ping Chiu, Bo-Chih Chen, et al. · Applied Physics Letters · 10
Luminescence mechanism and carrier dynamic studies of InGaN-based dichromatic light emitting diodes with ultraviolet and blue emissions
2008 · Shih-Wei Feng, Li-Wei Tu, et al. · Thin Solid Films · 9
Study of Nonpolar GaN/ZnO Heterostructures Grown by Molecular Beam Epitaxy
2013 · Chiao-Yun Chang, Huei-Min Huang, et al. · Crystal Growth & Design · 8
A Novel Technique for Growing Crack-Free GaN Thick Film by Hydride Vapor Phase Epitaxy
2008 · Hsin-Hsiung Huang, Kuei-Ming Chen, et al. · Japanese Journal of Applied Physics · 7
Publisher's Note: Growth and Characteristics ofa-Plane GaN on ZnO Heterostructure [J. Electrochem. Soc., 159, H290 (2012)]
2013 · Huei-Min Huang, Chin-Chi Kuo, et al. · ECS Journal of Solid State Science and Technology · 5
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Defects study of MOCVD grown β-Ga2O3films
2013 · Parvaneh Ravadgar, Ray-Hua Horng, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2
Growth and Characteristics of a-Plane GaN/ZnO/GaN Heterostructure
2013 · Chiao-Yun Chang, Huei-Min Huang, et al. · MRS Proceedings · 2
Confined acoustic vibrations in piezoelectric GaN nanorods
2012 · Pierre-Adrien Mante, Hung-Pin Chen, et al. · AIP conference proceedings · 2
Using hole screening effect on hole–phonon interaction to estimate hole density in Mg-doped InN
2011 · Yi-En Su, Yu-Chieh Wen, et al. · Applied Physics Letters · 2
Works count: 23
Citation count: 442
H-index: 12
I10-index: 15
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