Year: 2016
Type: article
Abstract: A topological insulator (TI) is a quantum material in a new class with attractive properties for physical and technological applications. Here we derive the electronic structure of highly crystalline Sb2Te2Se single crystals studied with angle-resolved photoemission spectra. The result of band mapping reveals that the Sb2Te2Se compound behaves as a p-type semiconductor and has an isolated Dirac cone of a topological surface state, which is highly favored for spintronic and thermoelectric devices because of the dissipation-less surface state and the decreased scattering from bulk bands. More importantly, the topological surface state and doping level in Sb2Te2Se are difficult to alter for a cleaved surface exposed to air; the robustness of the topological surface state defined in our data indicates that this Sb2Te2Se compound has a great potential for future atmospheric applications.
Source: Scientific Reports
DOI: 10.1038/srep36538
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,690
Awards: G2494647904, Study the Ultrafast Dynamics in Strongly Correlated Systems by Novel Time-Resolved Spectroscopy, Ultrafast Dynamics Studies of Bi-Series Topological Insulators and Their Applications for Low Threshold Solid State Lasers, G6282059440, Core Facilities of Crystal Growth in Southern Taiwan_Ultra-High Power Laser Crystal, Single Crystal Substrate with Pervoskite Structure, Ga2O3 Crystal, and Topological Insulator
OpenAlex ID: W2553898445