Author

Gad Eisenstein

Observed names: Eisenstein, Gad, G EISENSTEIN, G Eisenstein, G. EISENSTEIN, G. Eisenstein, G. Eisenstein G. Eisenstein

Institution: Technion – Israel Institute of Technology

Observed institutions: University of Kassel, AT&T (United States), University of Minnesota, Technion – Israel Institute of Technology, Hebrew University of Jerusalem, Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute, TDC (Denmark), Technische Universität Berlin, Massachusetts Institute of Technology, Nokia (United States)

OpenAlex ID: A5111552552

Tapered waveguide InGaAs/InGaAsP multiple-quantum-well lasers

1990 · T.L. Koch, U. Koren, et al. · IEEE Photonics Technology Letters · 182

Femtosecond gain dynamics in InGaAsP optical amplifiers

1990 · K. L. Hall, J. Mark, et al. · Applied Physics Letters · 159

Effects of annealing conditions on optical and electrical characteristics of titanium dioxide films deposited by electron beam evaporation

2001 · V. Mikhelashvili, G. Eisenstein · Journal of Applied Physics · 115

Wavelength division multiplexing light source with integrated quantum well tunable lasers and optical amplifiers

1989 · U. Koren, T. L. Koch, et al. · Applied Physics Letters · 115

Chemically Etched Conical Microlenses for Coupling Single Mode Lasers into Single Mode Fibers

1982 · G. Eisenstein, D. Vitello · Integrated and Guided-Wave Optics · 97

Low-loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator

1987 · U. Koren, B. I. Miller, et al. · Applied Physics Letters · 95

On the extraction of linear and nonlinear physical parameters in nonideal diodes

1999 · V. Mikhelashvili, G. Eisenstein, et al. · Journal of Applied Physics · 87

4-Gb/s transmission experiment over 117 km of optical fiber using a Ti:LiNbO3external modulator

1985 · S. Korotky, G. Eisenstein, et al. · Journal of Lightwave Technology · 86

Electrical characteristics of metal-dielectric-metal and metal-dielectric-semiconductor structures based on electron beam evaporated Y2O3, Ta2O5 and Al2O3 thin film

1998 · V. Mikhaelashvili, Y. Betzer, et al. · Journal of Applied Physics · 85

A Novel Multiloop Optoelectronic Oscillator

2008 · E. Shumakher, G. Eisenstein · IEEE Photonics Technology Letters · 84

Characteristics of electron-beam-gun-evaporated Er2O3 thin films as gate dielectrics for silicon

2001 · V. Mikhelashvili, G. Eisenstein, et al. · Journal of Applied Physics · 84

Carrier capture times in 1.5 μm multiple quantum well optical amplifiers

1992 · S. Weiss, J. M. Wiesenfeld, et al. · Applied Physics Letters · 80

Ultrafast gain dynamics in 1.5 μm multiple quantum well optical amplifiers

1991 · G. Eisenstein, J. M. Wiesenfeld, et al. · Applied Physics Letters · 76

Extraction of Schottky diode parameters with a bias dependent barrier height

2001 · V. Mikhelashvili, G. Eisenstein, et al. · Solid-State Electronics · 70

Large tunable delay with low distortion of 10 Gbit/s data in a slow light system based on narrow band fiber parametric amplification

2006 · E. Shumakher, A. Willinger, et al. · Optics Express · 64

Structural properties and electrical characteristics of electron-beam gun evaporated erbium oxide films

2002 · V. Mikhelashvili, G. Eisenstein, et al. · Applied Physics Letters · 59

Noise spectra of semiconductor optical amplifiers: relation between semiclassical and quantum descriptions

1998 · M. Shtaif, B. Tromborg, et al. · IEEE Journal of Quantum Electronics · 58

Femtosecond gain dynamics and saturation behavior in InGaAsP multiple quantum well optical amplifiers

1990 · K. L. Hall, Y. Lai, et al. · Applied Physics Letters · 57

Large- and small-signal gain characteristics of 1.5 μm multiple quantum well optical amplifiers

1990 · G. Eisenstein, U. Koren, et al. · Applied Physics Letters · 55

Fully connectorized high-speed Ti:LiNbO3switch/modulator for time-division multiplexing and data encoding

1985 · S. Korotky, G. Eisenstein, et al. · Journal of Lightwave Technology · 54

Gain recovery time of traveling-wave semiconductor optical amplifiers

1989 · G. Eisenstein, R. S. Tucker, et al. · Applied Physics Letters · 52

Short pulse gain saturation in InGaAsP diode laser amplifiers

1990 · Y. Lai, K.L. Hall, et al. · IEEE Photonics Technology Letters · 49

Coaxially mounted 67 GHz bandwidth InGaAs PIN photodiode

1986 · R.S. Tucker, A.J. Taylor, et al. · Electronics Letters · 46

Semi-insulating blocked planar BH GaInAsP/InP laser with high power and high modulation bandwidth

1988 · U. Koren, B.I. Miller, et al. · Electronics Letters · 45

Frequency stabilisation of FDM optical signals

1987 · B. Glance, P.J. Fitzgerald, et al. · Electronics Letters · 44

Works count: 179

Citation count: 3,219

H-index: 31

I10-index: 75