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Mukunda B. Das
Observed names:
MUKUNDA B. DAS,
Mukunda B Das
Institution:
Pennsylvania State University
Observed institutions:
Pennsylvania State University,
Instituto Venezolano de Investigaciones Científicas,
Wright-Patterson Air Force Base
OpenAlex ID:
A5111563597
The effects of contact size and non-zero metal resistance on the determination of specific contact resistance
1982
·
Gregory S. Marlow
, Mukunda B. Das
·
Solid-State Electronics
·
472
The characteristics of AuGe-based ohmic contacts to n-GaAs including the effects of aging
1983
·
Gregory S. Marlow
, Mukunda B. Das
, et al.
·
Solid-State Electronics
·
39
Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped FET structures using carrier saturation velocity/charge-control model
1985
·
Mukunda B. Das
, Michael L. Roszak
·
Solid-State Electronics
·
36
D.C. and high-frequency characteristics of built-in channel MOS-FETs
1978
·
Pierre E. Schmidt
, Mukunda B. Das
·
Solid-State Electronics
·
24
An experimental study of backgating effects in GaAs MESFETs
1985
·
Saptharishi Sriram
, Mukunda B. Das
·
Solid-State Electronics
·
12
Characterization of surface states in HCl-grown oxides using MOS transient currents
1980
·
Paul D. Esqueda
, Mukunda B. Das
·
Solid-State Electronics
·
8
Dependence of the threshold voltage on channel length in BC-mosfet's
1983
·
Pierre E. Schmidt
, Mukunda B. Das
·
Solid-State Electronics
·
7
Dependence of minority carrier bulk generation in silicon MOS structures on HCl concentration in an oxidizing ambient
1980
·
Paul D. Esqueda
, Mukunda B. Das
·
Solid-State Electronics
·
7
Roles of shallow and deep electron traps causing backgating in GaAs metal-semiconductor field-effect transistors
1986
·
Ravi Khanna
, Mukunda B. Das
·
Applied Physics Letters
·
6
Cross-modulation and intermodulation performance of MOS-FET's in tuned high-frequency amplifiers
1978
·
OMAR A. DOGHA
, MUKUNDA B. DAS
·
International Journal of Electronics
·
5
Fabrication and characteristics of MOS-FET's incorporating anodic aluminum oxide in the gate structure
1976
·
Ronald K. Raymond
, Mukunda B. Das
·
Solid-State Electronics
·
4
Photo-induced current measurement for the characterized of deep-level traps in lattice-matched MODFETs on InP substrate
1992
·
Roberto Sung
, Mukunda B. Das
·
Solid-State Electronics
·
3
The A-MOSFET—A majority carrier accumulation MOSFET
1982
·
Pierre E. Schmidt
, Mukunda B. Das
, et al.
·
Solid-State Electronics
·
2
On the noise performance of bipolar transistors in untuned amplifiers
1976
·
Mukunda B. Das
, Omar A. Dogha
·
Solid-State Electronics
·
2
DC analysis and design of the majority carrier accumulation MOSFET
1983
·
PIERRE E. SCHMIDT
, MUKUNDA B. DAS
, et al.
·
International Journal of Electronics
·
1
Small-signal conductance vs temperature: A rapid means of determining the nature of current transport in high-doped n-GaAs Schottky barrier diodes
1982
·
S. Sriram
, Mukunda B. Das
·
Solid-State Electronics
·
1
Silicon nitride for microelectronic applications; Applications and devices
1973
·
Mukunda B. Das
·
Materials Research Bulletin
·
1
The effects of extended depletion region on noise modeling of HEMT's
2005
·
Meena Mishra
, R. Muralidharan
, et al.
·
IEICE Electronics Express
PDF
High-Frequency Limits of Heterostructure Field-Effect Transistors (HFETs)
1997
·
Mukunda B Das
·
IETE Technical Review
OEIC Receivers : limits of High-Speed Performance
1997
·
Mukunda B. Das
·
한국통신학회 광전자공학 학술회의
A new design approach for a high‐transimpedance and low‐noise optoelectronic integrated lightwave receiver with 24‐GHz bandwidth
1994
·
Eugene John
, Mukunda B. Das
·
Microwave and Optical Technology Letters
Origin and Modeling of the Freauencv Dependent Output Conductance in GaAs MESFET's With Buried
1994
·
Seungmoo Choi
, Mukunda B. Das
Optical detectors and millimeter-wave amplifiers: structures for integration and their performance
1992
·
Mukunda B. Das
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
Examination of millimeter-wave performance potential of modulation doped AlGaAs/GaAs FET structures
1985
·
Mukunda B. Das
·
Defense Technical Information Center (DTIC)
CORRELATION BETWEEN EXCESS 1/f NOISE AND GATE LEAKAGE CURRENT IN ION IMPLANTED GaAs MESFET'S ON SEMI-INSULATING SUBSTRATES.
1981
·
Prasanta Ghosh
, S. Sriram
, et al.
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Works count:
26
Citation count:
630
H-index:
7
I10-index:
5
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