Work

D.C. and high-frequency characteristics of built-in channel MOS-FETs

Year: 1978

Type: article

Source: Solid-State Electronics

DOI: 10.1016/0038-1101(78)90018-7

Authors: Pierre E. Schmidt, Mukunda B. Das

Institutions: Pennsylvania State University, Instituto Venezolano de Investigaciones Científicas

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2063996170

FWCI: 3.944

Cites: 17

Cited by: 24

Related to: 10