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B. DeSalvo

CBRAM devices as binary synapses for low-power stochastic neuromorphic systems: Auditory (Cochlea) and visual (Retina) cognitive processing applications
2012 · M. Suri, O. Bichler, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 159
Performance and Reliability Features of Advanced Nonvolatile Memories Based on Discrete Traps (Silicon Nanocrystals, SONOS)
2004 · B. DeSalvo, C. Gerardi, et al. · IEEE Transactions on Device and Materials Reliability · 92
Variability-tolerant Convolutional Neural Network for Pattern Recognition applications based on OxRAM synapses
2014 · D. Garbin, O. Bichler, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 76
Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics
2000 · G. Ghibaudo, S. Bruyere, et al. · IEEE Transactions on Semiconductor Manufacturing · 60
Single Electron EffectsandStructuralEffects in Ultrascaled Silicon Nanocrystal Floating-Gate Memories
2004 · G. Molas, B. DeSalvo, et al. · IEEE Transactions on Nanotechnology · 49
Microscopic understanding of the low resistance state retention in HfO2 and HfAlO based RRAM
2014 · B. Traore, P. Blaise, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 36
Low-Frequency Noise in Oxide-Based $(\hbox{TiN}/ \hbox{HfO}_{x}/\hbox{Pt})$ Resistive Random Access Memory Cells
2012 · Z. Fang, H. Y. Yu, et al. · IEEE Transactions on Electron Devices · 36
In-depth investigation of programming and reading operations in RRAM cells integrated with Ovonic Threshold Switching (OTS) selectors
2017 · M. Alayan, E. Vianello, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 34
FDSOI CMOS devices featuring dual strained channel and thin BOX extendable to the 10nm node
2014 · Q. Liu, B. DeSalvo, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 31
A mobility enhancement strategy for sub-14nm power-efficient FDSOI technologies
2014 · B. DeSalvo, P. Morin, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 31
Experimental demonstration of short and long term synaptic plasticity using OxRAM multi k-bit arrays for reliable detection in highly noisy input data
2016 · T. Werner, E. Vianello, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 30
Planar Fully-Depleted-Silicon-On-Insulator technologies: Toward the 28 nm node and beyond
2015 · B. Doris, B. DeSalvo, et al. · Solid-State Electronics · 30
Addition of HfO2 interface layer for improved synaptic performance of phase change memory (PCM) devices
2012 · M. Suri, O. Bichler, et al. · Solid-State Electronics · 27
Current Conduction Model for Oxide-Based Resistive Random Access Memory Verified by Low-Frequency Noise Analysis
2013 · Z. Fang, H. Y. Yu, et al. · IEEE Transactions on Electron Devices · 23
Interface Engineering of PCM for Improved Synaptic Performance in Neuromorphic Systems
2012 · M. Suri, O. Bichler, et al. · IEEE International Memory Workshop (IMW) · 23
Analytical Model of the Effects of a Nonuniform Distribution of Stored Charge on the Electrical Characteristics of Discrete-Trap Nonvolatile Memories
2005 · L. Perniola, S. Bernardini, et al. · IEEE Transactions on Nanotechnology · 22
On the impact of OxRAM-based synapses variability on convolutional neural networks performance
2015 · D. Garbin, E. Vianello, et al. · IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH) · 20
Emerging oxide degradation mechanisms: Stress induced leakage current (SILC) and quasi-breakdown (QB)
1999 · G. Ghibaudo, P. Riess, et al. · Microelectronic Engineering · 19
Peculiar aspects of nanocrystal memory cells: data and extrapolations
2003 · I. Crupi, D. Corso, et al. · IEEE Transactions on Nanotechnology · 17
From Memory in our Brain to Emerging Resistive Memories in Neuromorphic Systems
2015 · B. DeSalvo, E. Vianello, et al. · IEEE International Memory Workshop (IMW) · 14
Emerging resistive memories for low power embedded applications and neuromorphic systems
2015 · B. DeSalvo, E. Vianello, et al. · IEEE International Symposium on Circuits and Systems proceedings · 14
In-depth Investigation of Hf-based High-k Dielectrics as Storage Layer of Charge-Trap NVMs
2006 · J. Buckley, M. Bocquet, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 13
Emerging memory technologies: Challenges and opportunities
2012 · B. DeSalvo, V. Sousa, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 12
Single-electron phenomena in ultra-scaled floating-gate devices and their impact on electrical characteristics
2005 · D. Deleruyelle, G. Molas, et al. · Solid-State Electronics · 10
Improved method for the oxide thickness extraction in MOS structures with ultra-thin gate dielectrics
2003 · G. Ghibaudo, S. Bruyere, et al. · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 10
Works count: 35
Citation count: 938
H-index: 18
I10-index: 25
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