Work

Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics

Year: 2000

Type: article

Source: IEEE Transactions on Semiconductor Manufacturing

DOI: 10.1109/66.843630

Authors: G. Ghibaudo, S. Bruyere, T. Devoivre, B. DeSalvo, E. Vincent

Institutions: Centre National de la Recherche Scientifique, STMicroelectronics (France)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2565185643

FWCI: 1.69

Cites: 4

Cited by: 60

Related to: 10