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E. Vincent

Review on high-k dielectrics reliability issues
2005 · G. Ribes, J. Mitard, et al. · IEEE Transactions on Device and Materials Reliability · 540
Hot-Carrier acceleration factors for low power management in DC-AC stressed 40nm NMOS node at high temperature
2009 · A. Bravaix, C. Guerin, et al. · IEEE International Reliability Physics Symposium proceedings · 201
A thorough investigation of MOSFETs NBTI degradation
2004 · V. Huard, M. Denais, et al. · Microelectronics Reliability · 157
A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment
2003 · F. Monsieur, E. Vincent, et al. · IEEE International Reliability Physics Symposium proceedings · 123
Self-Heating Effect in FDSOI Transistors Down to Cryogenic Operation at 4.2 K
2019 · K. Triantopoulos, M. Casse, et al. · IEEE Transactions on Electron Devices · 82
Variability Evaluation of 28nm FD-SOI Technology at Cryogenic Temperatures down to 100mK for Quantum Computing
2020 · B. Cardoso Paz, L. Le Guevel, et al. · Symposium on VLSI Technology · 74
Improved method for the oxide thickness extraction in MOS structures with ultrathin gate dielectrics
2000 · G. Ghibaudo, S. Bruyere, et al. · IEEE Transactions on Semiconductor Manufacturing · 60
Design-in-Reliability Approach for NBTI and Hot-Carrier Degradations in Advanced Nodes
2007 · Vincent Huard, C. R. Parthasarathy, et al. · IEEE Transactions on Device and Materials Reliability · 56
MIM capacitance variation under electrical stress
2003 · C. Besset, S. Bruyère, et al. · Microelectronics Reliability · 51
Hot-carrier to cold-carrier device lifetime modeling with temperature for low power 40nm Si-bulk NMOS and PMOS FETs
2011 · A. Bravaix, V. Huard, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 45
New Insights into Recovery Characteristics Post NBTI Stress
2006 · Cr Parthasarathy, M Denais, et al. · IEEE International Reliability Physics Symposium proceedings · 38
Impact of the gate-stack change from 40nm node SiON to 28nm High-K Metal Gate on the Hot-Carrier and Bias Temperature damage
2013 · A. Bravaix, Y. Mamy Randriamihaja, et al. · IEEE International Reliability Physics Symposium proceedings · 35
Wear-out, breakdown occurrence and failure detection in 18–25 Å ultrathin oxides
2001 · F. Monsieur, E. Vincent, et al. · Microelectronics Reliability · 34
Dielectric reliability in deep-submicron technologies: From thin to ultrathin oxides
1997 · E. Vincent, S. Bruyere, et al. · Microelectronics Reliability · 34
Designing in reliability in advanced CMOS technologies
2006 · C.R. Parthasarathy, M. Denais, et al. · Microelectronics Reliability · 33
Off state incorporation into the 3 energy mode device lifetime modeling for advanced 40nm CMOS node
2010 · A. Bravaix, C. Guerin, et al. · IEEE International Reliability Physics Symposium proceedings · 32
Quasi-breakdown in ultra-thin SiO/sub 2/ films: occurrence characterization and reliability assessment methodology
2002 · S. Bruyere, E. Vincent, et al. · IEEE International Reliability Physics Symposium proceedings · 32
PBTI mechanisms in La containing Hf-based oxides assessed by very Fast IV measurements
2010 · X. Garros, L. Brunet, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 26
Analysis of high temperature effects on performances and hot-carrier degradation in DC/AC stressed 0.35 μm n-MOSFETs
1999 · A. Bravaix, D. Goguenheim, et al. · Microelectronics Reliability · 25
Generalized trapping kinetic model for the oxide degradation after Fowler–Nordheim uniform gate stress
1997 · G. Pananakakis, G. Ghibaudo, et al. · Journal of Applied Physics · 24
Hot carrier degradation in nanowire transistors: Physical mechanisms, width dependence and impact of Self-Heating
2016 · A. Laurent, X. Garros, et al. · Symposium on VLSI Technology · 22
Impact of backside interface on Hot Carriers degradation of thin film FDSOI Nmosfets
2012 · L. Brunet, X. Garros, et al. · IEEE International Reliability Physics Symposium proceedings · 22
Evidence for defect-generation-driven wear-out of breakdown conduction path in ultra thin oxides
2003 · F. Monsieur, E. Vincent, et al. · IEEE International Reliability Physics Symposium proceedings · 22
Oxide traps characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements
2005 · F. Martinez, C. Leyris, et al. · Microelectronic Engineering · 21
On the oxide thickness extraction in deep-submicron technologies
2002 · E. Vincent, G. Ghibaudo, et al. · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 21
Works count: 97
Citation count: 2,284
H-index: 22
I10-index: 46
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