Work

Oxide traps characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements

Year: 2005

Type: article

Source: Microelectronic Engineering

DOI: 10.1016/j.mee.2005.04.043

Authors: F. Martinez, C. Leyris, G. Neau, M. Valenza, A. Hoffmann, J.C. Vildeuil, E. Vincent, F. Boeuf, T. Skotnicki, M. Bidaud, D. Barge, B. Tavel

Institutions: Centre National de la Recherche Scientifique, Institut d'Électronique et des Systèmes, Université Montpellier 2, STMicroelectronics (France), Philips (France)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1970322682

FWCI: 1.537

Cites: 8

Cited by: 21

Related to: 10