Product
Help
Pricing
About
Jobs
Log in
Get started
Author
Add to collection
B. Tavel
Observed names:
B Tavel,
Brice Tavel,
Tavel, Brice
Observed institutions:
Soitec (France),
Orange (France),
STMicroelectronics (France),
Philips (France)
OpenAlex ID:
A5066992015
75 nm damascene metal gate and high-k integration for advanced CMOS devices
2003
·
B. Guillaumot
, X. Garros
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
72
Innovative Smart Cut™ Piezo On Insulator (POI) Substrates for 5G acoustic filters
2020
·
E. Butaud
, S. Ballandras
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
69
Smart Cut™ Piezo On Insulator (POI) substrates for high performances SAW components
2020
·
Eric Butaud
, Brice Tavel
, et al.
·
IEEE International Ultrasonics Symposium
·
64
Totally silicided (CoSi/sub 2/) polysilicon: a novel approach to very low-resistive gate (∼2Ω/□) without metal CMP nor etching
2002
·
B. Tavel
, T. Skotnicki
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
57
16 nm planar NMOSFET manufacturable within state-of-the-art CMOS process thanks to specific design and optimisation
2002
·
F. Boeuf
, T. Skotnicki
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
56
A conventional 45nm CMOS node low-cost platform for general purpose and low power applications
2004
·
F. Boeuf
, F. Arnaud
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
51
Low cost 65nm CMOS platform for Low Power & General Purpose applications
2004
·
F. Arnaud
, B. Duriez
, et al.
·
Symposium on VLSI Technology
·
31
SON (Silicon-On-Nothing) P-MOSFETs with totally silicided (CoSi/sub 2/) polysilicon on 5 nm-thick Si-films: the simplest way to integration of metal gates on thin FD channels
2003
·
S. Monfray
, T. Skotnicki
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
25
Oxide traps characterization of 45 nm MOS transistors by gate current R.T.S. noise measurements
2005
·
F. Martinez
, C. Leyris
, et al.
·
Microelectronic Engineering
·
21
Thin oxynitride solution for digital and mixed-signal 65nm CMOS platform
2004
·
B. Tavel
, M. Bidaud
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
18
0.248μm/sup 2/ and 0.334μm/sup 2/ conventional bulk 6T-SRAM bit -cells for 45nm node low cost - general purpose applications
2005
·
F. Boeuf
, F. Arnaud
, et al.
·
Symposium on VLSI Technology
·
16
65nm LP/GP mix low cost platform for multi-media wireless and consumer applications
2005
·
B. Tavel
, B. Duriez
, et al.
·
European Solid-State Device Research Conference
·
16
Poly-gate replacement through contact hole (PRETCH): a new method for high-K/metal gate and multi-oxide implementation on chip
2005
·
S. Harrison
, P. Coronel
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
15
A Single Smart Cut POI Substrate Design for UHF, L and S Band Filters
2021
·
E. Butaud
, T. Laroche
, et al.
·
European Microwave Conference (EuMC)
·
12
Ultra-low cost and high performance 65nm CMOS device fabricated with plasma doping
2004
·
F. Lallement
, B. Duriez
, et al.
·
Symposium on VLSI Technology
·
11
65 nm Device Manufacture Using Shaped E-Beam Lithography
2004
·
Laurent Pain
, Murielle Jurdit
, et al.
·
Japanese Journal of Applied Physics
·
10
New hole trapping characterization during NBTI in 65nm node technology with distinct nitridation processing
2005
·
M. Denais
, A. Bravaix
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
9
MOSFET matching improvement in 65nm technology providing gain on both analog and SRAM performances
2005
·
R. Difrenza
, K. Rochereau
, et al.
·
IEEE International Conference on Microelectronic Test Structures (ICMTS)
·
8
Gate stack optimization for 65 nm CMOS low power and high performance platform
2004
·
B. Duriez
, B. Tavel
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
8
High performance 40 nm nMOSFETs with HfO/sub 2/ gate dielectric and polysilicon damascene gate
2003
·
B. Tavel
, X. Garros
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
7
Gate Oxide Cleans on Single Wafer Tool
2007
·
Philippe Garnier
, Tony Vessa
, et al.
·
ECS Transactions
·
6
PDF
Towards a better EOT - mobility trade-off in high-k oxide/metal gate CMOS devices
2004
·
M. Muller
, S. Duguay
, et al.
·
IEEE Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS)
·
6
Manufacturing concerns for advanced CMOS circuit realization EBDW alternative solution for cost and cycle time reductions
2004
·
Laurent Pain
, M. Jurdit
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
4
New generation of composite substrates based on a layer of LiTaO3 on silicon for surface acoustic waves components
2020
·
Clairet, Alexandre
, Courjon, Emilie
, et al.
·
HAL
·
3
65nm LP/GP mix low cost platform for multi-media wireless and consumer applications
2006
·
B. Tavel
, B. Duriez
, et al.
·
Solid-State Electronics
·
2
Show more works
View as search
Works count:
34
Citation count:
606
H-index:
13
I10-index:
16
Year
Topic
Type