Work

New hole trapping characterization during NBTI in 65nm node technology with distinct nitridation processing

Year: 2005

Type: conference-paper

Source: IEEE International Integrated Reliability Workshop final report

DOI: 10.1109/irws.2004.1422753

Authors: M. Denais, A. Bravaix, V. Huard, C. Parthasarathy, M. Bidaud, G. Ribes, D. Barge, L. Vishubhotla, B. Tavel, Y. Rey-Tauriac, F. Perrier, N. Revil, F. Arnaud, P. Stolk

Institutions: Centre National de la Recherche Scientifique, STMicroelectronics (France), Philips (France)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1580433697

FWCI: 4.503

Cites: 7

Cited by: 9

Related to: 10