Work

MIM capacitance variation under electrical stress

Year: 2003

Type: article

Source: Microelectronics Reliability

DOI: 10.1016/s0026-2714(03)00177-x

Authors: C. Besset, S. Bruyère, S. Blonkowski, S. Crémer, E. Vincent

Institution: STMicroelectronics (France)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1995473702

FWCI: 1.655

Cites: 4

Cited by: 51

Related to: 10