Work

Design-in-Reliability Approach for NBTI and Hot-Carrier Degradations in Advanced Nodes

Year: 2007

Type: article

Source: IEEE Transactions on Device and Materials Reliability

DOI: 10.1109/tdmr.2007.911380

Authors: Vincent Huard, C. R. Parthasarathy, Alain Bravaix, T. Hugel, ChloÉ Guerin, E. Vincent

Institutions: STMicroelectronics (France), Centre National de la Recherche Scientifique, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2133807254

FWCI: 1.528

Cites: 21

Cited by: 56

Related to: 10