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H. Tanoue

Demonstration, Analysis, and Device Design Considerations for Independent DG MOSFETs
2005 · M. Masahara, Y. Liu, et al. · IEEE Transactions on Electron Devices · 125
A thin-film solar cell of high-quality β -FeSi2/Si heterojunction prepared by sputtering
2005 · Zhengxin Liu, Shinan Wang, et al. · Solar Energy Materials and Solar Cells · 94
Generation of electron carriers in insulating thin film of MgIn2O4 spinel by Li+ implantation
1994 · H. Kawazoe, N. Ueda, et al. · Journal of Applied Physics · 92
Studies on aluminum-doped ZnO films for transparent electrode and antireflection coating of β-FeSi2 optoelectronic devices
2005 · Teruhisa Ootsuka, Zhengxin Liu, et al. · Thin Solid Films · 63
Maskless etching of a nanometer structure by focused ion beams
1983 · Masanori Komuro, Hiroshi Hiroshima, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 62
Uniaxial magnetic anisotropy of submicron MnAs ferromagnets in GaAs semiconductors
1998 · K. Ando, A. Chiba, et al. · Applied Physics Letters · 56
Ultrathin Channel Vertical DG MOSFET Fabricated by Using Ion-Bombardment-Retarded Etching
2004 · M. Masahara, Y. Liu, et al. · IEEE Transactions on Electron Devices · 55
Control of emission currents from silicon field emitter arrays using a built-in MOSFET
1997 · Seigo Kanemaru, Takayuki Hirano, et al. · Applied Surface Science · 49
Measurement of virtual crossover in liquid gallium ion source
1983 · Masanori Komuro, Toshihiko Kanayama, et al. · Applied Physics Letters · 46
Fluorescence-Detected X-Ray Absorption Spectroscopy Applied to Structural Characterization of Very Thin Films; Ion-Beam-Induced Modification of Thin Ni Layers on Si(100)
1985 · Hiroyuki Oyanagi, Tadashi Matsushita, et al. · Japanese Journal of Applied Physics · 44
Raman scattering study of the recovery process in Ga ion implanted GaSb
1993 · S. G. Kim, H. Asahi, et al. · Journal of Applied Physics · 42
Spatial Distribution of Energy Deposited by Energetic Heavy Ions in Semiconductors
1971 · Toshio Tsurushima, Hisao Tanoue · Journal of the Physical Society of Japan · 41
Control of emission characteristics of silicon field emitter arrays by an ion implantation technique
1996 · Seigo Kanemaru, Takayuki Hirano, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 40
Study of Ga ion implantation damage and annealing effect in Sn-doped InP using Raman scattering
1989 · Soon Jae Yu, Hajime Asahi, et al. · Journal of Applied Physics · 40
Reduction of iron diffusion in silicon during the epitaxial growth of β-FeSi2 films by use of thin template buffer layers
2004 · Zhengxin Liu, Yasuhito Suzuki, et al. · Journal of Applied Physics · 36
Niobium silicide formation induced by Ar-ion bombardment
1979 · T. Kanayama, H. Tanoue, et al. · Applied Physics Letters · 36
Fabrication of a New Si Field Emitter Tip with Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Structure
1996 · Takayuki Hirano, Seigo Kanemaru, et al. · Japanese Journal of Applied Physics · 34
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15-nm-thick Si channel wall vertical double-gate MOSFET
2003 · M. Masahara, T. Matsukawa, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 31
Important research targets to be explored for $beta;-FeSi2 device making
2004 · Y Makita, Y Nakayama, et al. · Thin Solid Films · 29
Doping of β-FeSi2 films with boron and arsenic by sputtering and its application for optoelectronic devices
2004 · Zhengxin Liu, Masato Osamura, et al. · Optical Materials · 28
Dopant profiling in vertical ultrathin channels of double-gate metal–oxide–semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy
2004 · Meishoku Masahara, Shinichi Hosokawa, et al. · Applied Physics Letters · 26
Structural and magnetic properties of Fe ion implanted Al2O3
1999 · I Sakamoto, S Honda, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 26
Intermixing of InGaAs/InP multiple quantum well structures by Ga implantation
1989 · Hitoshi Sumida, Hajime Asahi, et al. · Applied Physics Letters · 26
Emission Characteristics of Ion-Implanted Silicon Emitter Tips
1995 · Takayuki Hirano, Seigo Kanemaru, et al. · Japanese Journal of Applied Physics · 25
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Ion-induced phase transformation in type 304 austenitic stainless steel by rare-gas ion irradiation
1990 · I. Sakamoto, N. Hayashi, et al. · Journal of Applied Physics · 25
Works count: 184
Citation count: 1,932
H-index: 25
I10-index: 59
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