Author

J. Nishizawa

Observed names: J Nishizawa, J. NISHIZAWA, J.-I. Nishizawa, Jun-Ichi Nishizawa, Jun-ichi Nishizawa

Observed institutions: Tohoku University, Telecommunications Advancement Foundation, Research Institute of Electrical Communication, Tohoku University, Semiconductor Research Institute, Sophia University

OpenAlex ID: A5111604787

Growth of Low Dislocation Density GaAs by As Pressure‐Controlled Czochralski Method

1984 · K. Tomizawa, K. Sassa, et al. · Journal of The Electrochemical Society · 48

GaAs TUNNETT Diodes

1978 · J. Nishizawa, K. Motoya, et al. · IEEE Transactions on Microwave Theory and Techniques · 43

706‐GHz GaAs CW fundamental‐mode TUNNETT diodes fabricated with molecular layer epitaxy

2008 · J. Nishizawa, P. Płotka, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 40

240-325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy

2003 · P. Plotka, J. Nishizawa, et al. · IEEE Transactions on Electron Devices · 36

Terahertz dichroism of MBBA liquid crystal on rubbed substrate

2005 · Jun-ichi Nishizawa, Tetsuya Yamada, et al. · Applied Surface Science · 30

Ballistic and tunneling GaAs static induction transistors: nano-devices for THz electronics

2002 · J. Nishizawa, P. Plotka, et al. · IEEE Transactions on Electron Devices · 30

Ideal static induction transistor implemented with molecular layer epitaxy

1994 · Piotr Płotka, Toru Kurabayashi, et al. · Applied Surface Science · 27

Simple structured PMOSFET fabricated using molecular layer doping

1990 · J. Nishizawa, K. Aoki, et al. · IEEE Electron Device Letters · 24

Efficiency of GaAlAs heterostructure red light-emitting diodes

1983 · J. Nishizawa, M. Koike, et al. · Journal of Applied Physics · 24

The 2.45 GHz 36 W CW Si recessed gate type SIT with high gain and high voltage operation

2000 · J. Nishizawa, K. Motoya, et al. · IEEE Transactions on Electron Devices · 22

Alloy-diffused variable capacitance diode with large figure-of-merit

1961 · A. Shimizu, J. Nishizawa · IRE Transactions on Electron Devices · 19

Terahertz-wave absorption in GaP crystals with different carrier densities

2007 · K. Saito, T. Tanabe, et al. · Journal of Physics and Chemistry of Solids · 18

Silicon alloy-diffused variable capacitance diode

1963 · T. Sukegawa, K. Fujikawa, et al. · Solid-State Electronics · 17

Molecular layer epitaxy of GaAs

1993 · Jun-ichi Nishizawa, Hiroshi Sakuraba, et al. · Thin Solid Films · 16

High-Frequency High-Power Static Induction Transistor

1995 · M. Tatsuta, E. Yamanaka, et al. · IEEE Industry Applications Magazine · 12

Bulk oscillation by tunnel injection

1968 · T. Okabe, J. Nishizawa, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 12

Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum

2002 · Yutaka Oyama, Kenji Tezuka, et al. · Journal of Crystal Growth · 11

A design method for variable-capacitance diodes with an m-th power characteristic for a wide voltage range

1966 · T. Sukegawa, T. Sakurai, et al. · IEEE Transactions on Electron Devices · 11

High power static induction transistor

1978 · T. Ohmi, J. Nishizawa, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 10

Current-voltage characteristics and noise performance of a static induction transistor for video frequency

1988 · T. Tamamushi, T. Akiyama, et al. · IEEE Transactions on Electron Devices · 8

Luminescence study of a deep level in N-free GaP light-emitting diodes

1982 · J. Nishizawa, C. C. Jin, et al. · Journal of Applied Physics · 8

Semiconductor inductance diode

1960 · J. Nishizawa, Y. Watanabe · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 8

Free exciton recombination in GaP and layers grown by temperature difference method under controlled vapor pressure

1996 · K. Suto, S. Adachi, et al. · Journal of Crystal Growth · 7

Terahertz vibrational spectra of metallocene

2006 · Jun-ichi Nishizawa, Takenori Tanno, et al. · Journal of Organometallic Chemistry · 6

Calculation of the optimum vapor pressure for stoichiometry in PbTe and PbSnTe

2003 · K. Suto, J. Nishizawa, et al. · Materials Science in Semiconductor Processing · 6

Works count: 68

Citation count: 555

H-index: 14

I10-index: 19