Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum
Year: 2002
Type: article
Source: Journal of Crystal Growth
Institution: Tohoku University
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Funder: Soochow University
OpenAlex ID: W1978744174