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Wei-Ching Huang

A bipolar host containing carbazole/dibenzothiophene for efficient solution-processed blue and white phosphorescent OLEDs
2013 · Wei-Chieh Lin, Wei-Ching Huang, et al. · Journal of Materials Chemistry C · 51
Efficient inverted quasi-bilayer organic solar cells fabricated by using non-halogenated solvent processes
2014 · Jung-Hao Chang, Hsiao-Fang Wang, et al. · Journal of Materials Chemistry A · 39
Growth of GaN film on 150mm Si (111) using multilayer AlN∕AlGaN buffer by metal-organic vapor phase epitaxy method
2007 · Kung-Liang Lin, Edward-Yi Chang, et al. · Applied Physics Letters · 36
Investigations of GaN growth on the sapphire substrate by MOCVD method with different AlN buffer deposition temperatures
2016 · Wei-Ching Huang, Chung-Ming Chu, et al. · Materials Science in Semiconductor Processing · 35
Highly efficient organic solar cells using a solution-processed active layer with a small molecule donor and pristine fullerene
2014 · Hao-Wu Lin, Jung-Hao Chang, et al. · Journal of Materials Chemistry A · 33
Photovoltaic performance of novel push–pull–push thienyl–Bodipy dyes in solution-processed BHJ-solar cells
2014 · Alexandra Sutter, Pascal Retailleau, et al. · New Journal of Chemistry · 29
Morphology, molecular stacking, dynamics and device performance correlations of vacuum-deposited small-molecule organic solar cells
2014 · Chang-Wen Chen, Zheng-Yu Huang, et al. · Physical Chemistry Chemical Physics · 26
Investigation of TMAl preflow to the properties of AlN and GaN film grown on Si(111) by MOCVD
2014 · Franky Lumbantoruan, Yuan-Yee Wong, et al. · IEEE International Conference on Semiconductor Electronics · 23
Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates
2012 · Yu-Lin Hsiao, Lung-Chi Lu, et al. · Japanese Journal of Applied Physics · 13
Effects of AlxGa1−xN interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition
2010 · Kung-Liang Lin, Edward-Yi Chang, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 12
A Cu-based alloyed Ohmic contact system on n-type GaAs
2007 · Ke-Shian Chen, Edward Yi Chang, et al. · Applied Physics Letters · 9
Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure
2017 · Franky J. Lumbantoruan, Yuen-Yee Wong, et al. · Journal of Electronic Materials · 8
Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors
2014 · Yuen-Yee Wong, Edward Yi Chang, et al. · Applied Physics Express · 8
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Effect of Nitridation on the Regrowth Interface of AlGaN/GaN Structures Grown by Molecular Beam Epitaxy on GaN Templates
2012 · Yuen-Yee Wong, Wei-Ching Huang, et al. · Journal of Electronic Materials · 8
The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method
2015 · Wei-Ching Huang, Chung-Ming Chu, et al. · Journal of Electronic Materials · 6
Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors
2015 · Wei-Ching Huang, Kuan-Shin Liu, et al. · Japanese Journal of Applied Physics · 5
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InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
2009 · Chia-Yuan Chang, Edward Yi Chang, et al. · ECS Transactions · 2
Effect of Graded AlxGa1-xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method
2008 · KungLiang Lin, Edward-Yi Chang, et al. · MRS Proceedings · 1
The effects of growth parameters on the electrical properties in InAlN/AlN/GaN high-electron-mobility transistors (HEMTs)
2014 · Wei-Ching Huang, Yuen-Yee Wong, et al. · IEEE International Conference on Semiconductor Electronics
Effect of Pressure on InAlN Films Grown by MOCVD for HEMT Application
2013 · Wei-Ching Huang, Kusan-Shin Liu, et al. · ECS Meeting Abstracts
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The parasitic reaction during the MOCVD growth of AlInN material
2012 · Wei-Ching Huang, Yuen-Yee Wong, et al. · IEEE International Conference on Semiconductor Electronics
Reduction of Parallel Conduction at the Regrowth Interface of GaN Template Using Nitridation
2011 · Yuen-Yee Wong, Edward Yi Chang, et al. · ECS Meeting Abstracts
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InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
2009 · Chia-Yuan Chang, Edward Yi Chang, et al. · ECS Meeting Abstracts
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Works count: 23
Citation count: 344
H-index: 10
I10-index: 10
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