Work

Effects of AlxGa1−xN interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition

Year: 2010

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/1.3385672

Authors: Kung-Liang Lin, Edward-Yi Chang, Yu-Lin Hsiao, Wei-Ching Huang, Tien-Tung Luong, Yuen-Yee Wong, Tingkai Li, Doug Tweet, Chen-Hao Chiang

Institution: National Yang Ming Chiao Tung University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Council

OpenAlex ID: W2016156533

FWCI: 0.709

Cites: 20

Cited by: 12

Related to: 10