Author

Yu-Lin Hsiao

Observed institution: National Yang Ming Chiao Tung University

OpenAlex ID: A5110194022

Growth of GaN film on 150mm Si (111) using multilayer AlN∕AlGaN buffer by metal-organic vapor phase epitaxy method

2007 · Kung-Liang Lin, Edward-Yi Chang, et al. · Applied Physics Letters · 36

Discontinuous Current Mode Modeling and Zero Current Switching of Flyback Converter

2021 · Rustam Kumar, Chih-Chiang Wu, et al. · Energies · 13

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Effects of AlxGa1−xN interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition

2010 · Kung-Liang Lin, Edward-Yi Chang, et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 12

Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates

2014 · Yu-Lin Hsiao, Chia-Ao Chang, et al. · Applied Physics Express · 8

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Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate

2014 · Yu-Lin Hsiao, Yi-Jie Wang, et al. · Applied Physics Express · 4

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The growth of pine-leaf-like hierarchical SnO2nanostructures

2013 · Chang Fu Dee, Teck Yaw Tiong, et al. · Journal of Experimental Nanoscience · 3

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An AlGaAs/InGaAs HEMT Grown on Si Substrate with Ge/GexSi1-x Metamorphic Buffer Layers

2008 · Edward Chang, Yueh-Chin Lin, et al. · MRS Proceedings

Works count: 7

Citation count: 76

H-index: 4

I10-index: 3