Investigation of the low-temperature AlGaN interlayer in AlGaN/GaN/AlGaN double heterostructure on Si substrate
Year: 2014
Type: article
Abstract: A low-temperature (LT) AlGaN interlayer is inserted in the Al 0.1 Ga 0.9 N back barrier layer of an Al 0.2 Ga 0.8 N/GaN/Al 0.1 Ga 0.9 N double heterostructure grown on a 150 mm Si substrate. It is found that the 21-nm-thick LT-AlGaN interlayer plays an important role in stress relaxation and dislocation reduction of the Al 0.1 Ga 0.9 N back barrier layer, especially for screw dislocation reduction. In addition, a buffer breakdown voltage higher than 600 V is achieved, which is much higher than those of conventional heterostructures. These results demonstrate the effectiveness of combining the LT-AlGaN interlayer and the Al 0.2 Ga 0.8 N/GaN/Al 0.1 Ga 0.9 N double heterostructure on a Si substrate to increase the breakdown voltage for high-power applications.
Source: Applied Physics Express
Institution: National Yang Ming Chiao Tung University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W2129358022