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Nobuhiko Oda
Observed names:
N. Oda,
Nobuhiko Oda Nobuhiko Oda,
小田信彦
Institution:
The University of Tokyo
Observed institutions:
NEC (Japan),
Sanyo Electric (Japan),
The University of Tokyo
OpenAlex ID:
A5111633129
Influence of the Existence of an Underlying SiO2 Layer on the Lateral Solid‐Phase Epitaxy of Amorphous Silicon
1994
·
Yoshihiro Morimoto
, Shiroh Nakanishi
, et al.
·
Journal of The Electrochemical Society
·
8
Enhanced cycle capacity retention of plasma-sprayed SiOxnanocomposite powders for negative electrode of lithium ion batteries
2014
·
Makoto Kambara
, Nobuhiko Oda
, et al.
·
Japanese Journal of Applied Physics
·
7
PDF
High-Performance Cu-Interconnects with Novel Seamless Low-k SiOCH Stacks (SEALS) Featured by Compositional Modulation Process for 45nm-Node ULSI Devices
2006
·
M. Tagami
, H. Ohtake
, et al.
·
Symposium on VLSI Technology
·
7
A Novel Fabrication Technique of Multilayer Stacked Silicon-on-Insulator Structure Applicable to Three-Dimensional ICs
1991
·
Kazuhiko Kawai
, Shiroh Nakanishi
, et al.
·
Japanese Journal of Applied Physics
·
4
PDF
Fabrication of SnO 2 films in water-vapor annealing
2013
·
Nobuhiko Oda
·
The Japan Society of Applied Physics
Poly Si TFTs Using Solid Phase Growth.
1993
·
森本佳宏
, 阿部寿
, et al.
·
応用物理学会学術講演会講演予稿集
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Works count:
6
Citation count:
26
H-index:
4
I10-index:
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