Author

Po‐Yung Liao

Observed names: Po Yung Liao, Po-Yung Liao

Institution: National Sun Yat-sen University

Observed institutions: National Taiwan Normal University, National Sun Yat-sen University, National Yang Ming Chiao Tung University

OpenAlex ID: A5111636769

Effect of mechanical-strain-induced defect generation on the performance of flexible amorphous In–Ga–Zn–O thin-film transistors

2016 · Po-Yung Liao, Ting-Chang Chang, et al. · Applied Physics Express · 54

Impact of repeated uniaxial mechanical strain on p-type flexible polycrystalline thin film transistors

2015 · Bo-Wei Chen, Ting-Chang Chang, et al. · Applied Physics Letters · 54

Effects of Repetitive Mechanical Bending Strain on Various Dimensions of Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimide

2016 · Bo-Wei Chen, Ting-Chang Chang, et al. · IEEE Electron Device Letters · 47

Hot-Carrier Effect on Amorphous In-Ga-Zn-O Thin-Film Transistors With a Via-Contact Structure

2013 · Tien-Yu Hsieh, Ting-Chang Chang, et al. · IEEE Electron Device Letters · 36

Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors

2018 · Chung-I. Yang, Cheng-Ming Tsai, et al. · IEEE Journal of the Electron Devices Society · 30

Role of H 2 O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors

2017 · Yu-Chieh Chien, Ting-Chang Chang, et al. · IEEE Electron Device Letters · 28

Investigation of a Hump Phenomenon in Back-Channel-Etched Amorphous In-Ga-Zn-O Thin-Film Transistors Under Negative Bias Stress

2017 · Jianwen Yang, Po-Yung Liao, et al. · IEEE Electron Device Letters · 27

H2O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress

2017 · Jianwen Yang, Po-Yung Liao, et al. · Applied Physics Letters · 26

Investigation of an anomalous hump phenomenon in via-type amorphous In-Ga-Zn-O thin-film transistors under positive bias temperature stress

2017 · Jianwen Yang, Po-Yung Liao, et al. · Applied Physics Letters · 26

Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide

2017 · Bo-Wei Chen, Hsin-Lu Chen, et al. · IEEE Transactions on Electron Devices · 24

Localized tail state distribution and hopping transport in ultrathin zinc-tin-oxide thin film transistor

2017 · Jeng-Ting Li, Li-Chih Liu, et al. · Applied Physics Letters · 21

Application of in-cell touch sensor using photo-leakage current in dual gate a-InGaZnO thin-film transistors

2012 · Tien-Yu Hsieh, Ting-Chang Chang, et al. · Applied Physics Letters · 21

Effect of SiO2 Buffer Layer Thickness on Performance and Reliability of Flexible Polycrystalline Silicon TFTs Fabricated on Polyimide

2016 · Bo-Wei Chen, Ting-Chang Chang, et al. · IEEE Electron Device Letters · 20

The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors

2017 · Wan-Ching Su, Ting-Chang Chang, et al. · Applied Physics Letters · 16

Investigation of carrier transport behavior in amorphous indium–gallium–zinc oxide thin film transistors

2015 · Po-Yung Liao, Ting-Chang Chang, et al. · Japanese Journal of Applied Physics · 16

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Effects of Mechanical Stress on Flexible Dual‐Gate a‐InGaZnO Thin‐Film Transistors

2017 · Jianwen Yang, Ting‐Chang Chang, et al. · physica status solidi (a) · 14

Impact of repeated uniaxial mechanical strain on flexible a-IGZO thin film transistors with symmetric and asymmetric structures

2017 · Po-Yung Liao, Ting-Chang Chang, et al. · Applied Physics Letters · 13

Investigation of temperature-dependent asymmetric degradation behavior induced by hot carrier effect in oxygen ambiance in In–Ga–Zn-O thin film transistors

2014 · Bo-Wei Chen, Ting-Chang Chang, et al. · Thin Solid Films · 13

Characterization and Investigation of a Hot-Carrier Effect in Via-Contact Type a-InGaZnO Thin-Film Transistors

2013 · Tien-Yu Hsieh, Ting-Chang Chang, et al. · IEEE Transactions on Electron Devices · 10

The effect of device electrode geometry on performance after hot-carrier stress in amorphous In-Ga-Zn-O thin film transistors with different via-contact structures

2017 · Po-Yung Liao, Ting-Chang Chang, et al. · Applied Physics Letters · 9

Competing weak localization and weak antilocalization in amorphous indium–gallium–zinc-oxide thin-film transistors

2017 · Wei-Hsiang Wang, Syue-Ru Lyu, et al. · Applied Physics Letters · 9

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Influence of Hot Carriers and Illumination Stress on a-InGaZnO TFTs With Asymmetrical Geometry

2020 · Yang-Hao Hung, Ting-Chang Chang, et al. · IEEE Electron Device Letters · 8

An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors

2019 · Guan-Fu Chen, Hong-Chih Chen, et al. · IEEE Transactions on Electron Devices · 6

Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors

2018 · Chung-I Yang, Ting-Chang Chang, et al. · IEEE Transactions on Electron Devices · 6

Investigating degradation behaviors induced by hot carriers in the etch stop layer in amorphous InGaZnO thin film transistors with different electrode materials and structures

2017 · Chung-I Yang, Ting-Chang Chang, et al. · Thin Solid Films · 3

Works count: 33

Citation count: 546

H-index: 15

I10-index: 19