Author

Marek Roelke

Observed names: M Roelke, M. Rölke

Institutions: GlobalFoundries (Germany), Dresden Integrated Center for Applied Physics and Photonic Materials, Technische Universität Dresden

Observed institutions: GlobalFoundries (Germany), Dresden Integrated Center for Applied Physics and Photonic Materials, Technische Universität Dresden

OpenAlex ID: A5111650206

Effects of patterning induced stress relaxation in strained SOI/SiGe layers and substrate

2011 · P. Hermann, M. Hecker, et al. · Journal of Applied Physics · 12

Strain distribution analysis in Si/SiGe line structures for CMOS technology using Raman spectroscopy

2010 · M Hecker, M Roelke, et al. · Journal of Physics Conference Series · 5

Surface-sensitive strain analysis of Si/SiGe line structures by Raman and UV-Raman spectroscopy

2009 · Marek Roelke, Michael Hecker, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1

Works count: 3

Citation count: 18

H-index: 2

I10-index: 1