Work

Effects of patterning induced stress relaxation in strained SOI/SiGe layers and substrate

Year: 2011

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/1.3597641

Authors: P. Hermann, M. Hecker, F. Renn, M. Rölke, K. Kolanek, J. Rinderknecht, L. M. Eng

Institutions: GlobalFoundries (Germany), Center Nanoelectronic Technologies, Dresden Integrated Center for Applied Physics and Photonic Materials, Technische Universität Dresden, Brandenburg University of Technology Cottbus-Senftenberg

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: European Commission, Freistaat Sachsen

OpenAlex ID: W2050108342

FWCI: 1.517

Cites: 24

Cited by: 12

Related to: 10