Get started
Author

Brad J. Robinson

Observed names: B J Robinson, B Robinson, B. J. ROBINSON, B. J. Robinson, B. Robinson, B.J Robinson, B.J. Robinson, Brad Robinson, Robinson, B. J., Robinson, Brad J.
OpenAlex ID: A5111656472
Discovery of interstellar methyl formate
1975 · R. D. Brown, J. G. Crofts, et al. · The Astrophysical Journal · 143
A search for interstellar glycine
1979 · R. D. Brown, P. D. Godfrey, et al. · Monthly Notices of the Royal Astronomical Society · 74
PDF
Spinodal-like decomposition of grown by gas source molecular beam epitaxy
1995 · R.R. LaPierre, T. Okada, et al. · Journal of Crystal Growth · 70
Strain relief and AlSb buffer layer morphology in GaSb heteroepitaxial films grown on Si as revealed by high-angle annular dark-field scanning transmission electron microscopy
2011 · S. Hosseini Vajargah, M. Couillard, et al. · Applied Physics Letters · 61
1.4-μm InGaAsP-InP strained multiple-quantum-well laser for broad-wavelength tunability
1997 · Xiang Zhu, D.T. Cassidy, et al. · IEEE Photonics Technology Letters · 60
Lateral composition modulation in InGaAsP strained layers and quantum wells grown on (100) InP by gas source molecular beam epitaxy
1996 · R.R. LaPierre, T. Okada, et al. · Journal of Crystal Growth · 52
Solid phase epitaxial regrowth of Si1−xGex/Si strained-layer structures amorphized by ion implantation
1989 · B. T. Chilton, B. J. Robinson, et al. · Applied Physics Letters · 52
Discovery of Interstellar Methanimine (Formaldimine)
1973 · P. D. Godfrey, Ronald D. Brown, et al. · ACM SIGAPL APL Quote Quad · 40
Subpicosecond carrier lifetime in beryllium-doped InGaAsP grown by He-plasma-assisted molecular beam epitaxy
1997 · Li Qian, S. D. Benjamin, et al. · Applied Physics Letters · 39
Controlled group V intermixing in InGaAsP quantum well structures and its application to the fabrication of two section tunable lasers
2002 · J. H. Teng, J. R. Dong, et al. · Journal of Applied Physics · 32
Enhanced band-gap blueshift due to group V intermixing in InGaAsP multiple quantum well laser structures induced by low temperature grown InP
2001 · A. S. W. Lee, M. MacKenzie, et al. · Applied Physics Letters · 29
Group V incorporation in InGaAsP grown on InP by gas source molecular beam epitaxy
1996 · R. R. LaPierre, B. J. Robinson, et al. · Journal of Applied Physics · 28
Observations of SiO masers at 43 GHz with the Parkes radio telescope
1977 · M. Balister, R. A. Batchelor, et al. · Monthly Notices of the Royal Astronomical Society · 28
PDF
Effect of barrier height on the uneven carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers
1998 · M.J. Hamp, D.T. Cassidy, et al. · IEEE Photonics Technology Letters · 27
Nonuniform carrier distribution in asymmetric multiple-quantum-well InGaAsP laser structures with different numbers of quantum wells
1999 · Michael J. Hamp, Daniel T. Cassidy, et al. · Applied Physics Letters · 26
Picosecond carrier lifetime and large optical nonlinearities in InGaAsP grown by He-plasma-assisted molecular beam epitaxy
1997 · L. Qian, S. D. Benjamin, et al. · Optics Letters · 24
The distribution of CO in the Galaxy for longitudes 294 deg to 86 deg
1984 · B. J. Robinson, R. N. Manchester, et al. · The Astrophysical Journal · 24
InP/InGaAsP double-heterostructure optoelectronic switch
1993 · S.J. Kovacic, B.J. Robinson, et al. · IEEE Electron Device Letters · 22
Characterization of defects in doped InGaAsN grown by molecular-beam epitaxy
2001 · A. Fleck, B. J. Robinson, et al. · Applied Physics Letters · 21
Effect of barrier thickness on the carrier distribution in asymmetric multiple-quantum-well InGaAsP lasers
2000 · M.J. Hamp, D.T. Cassidy, et al. · IEEE Photonics Technology Letters · 19
InGaAs/InP quantum wires grown by gas source molecular beam epitaxy onto V-grooved InP substrates with (111)A facet sidewalls
1995 · J. Wang, B. J. Robinson, et al. · Applied Physics Letters · 19
Dual-band photodetectors based on interband and intersubband transitions
2001 · H.C Liu, C.Y Song, et al. · Infrared Physics & Technology · 17
Dislocation relaxation in InAsyP1−y films deposited onto (001) InP by gas-source molecular beam epitaxy
1993 · T. Okada, R. V. Kruzelecky, et al. · Applied Physics Letters · 17
Studies of GaAs–oxide interfaces with and without Si interlayer
1990 · J. L. Freeouf, D. A. Buchanan, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 17
Effect of growth temperature on InGaSb metamorphic layers and the fabrication of InGaSb p-i-n diodes
2008 · F. M. Mohammedy, O. Hulko, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 15
Works count: 166
Citation count: 1,479
H-index: 19
I10-index: 44
Year
Topic
Type