Subpicosecond carrier lifetime in beryllium-doped InGaAsP grown by He-plasma-assisted molecular beam epitaxy
Year: 1997
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.119952
Authors: Li Qian, S. D. Benjamin, P. W. E. Smith, B. J. Robinson, D. A. Thompson
Institutions: University of Toronto, McMaster University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W2011198261