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C.A. Sébenne

Observed names: C A Sebenne, C A Sébenne, C Sebenne, C Sébenne, C. A. Sebenne, C. A. SÉBENNE, C. A. Sébenne, C. SEBENNE, C. Sebenne, C. SÉbenne, C. Sébenne, C.A Sébenne, C.A. SEBENNE, C.A. Sebenne, C.A. SÉBENNE, Claude Sébenne, Sébenne, Claude
Observed institutions: University of Modena and Reggio Emilia, Lawrence Livermore National Laboratory, Centre National de la Recherche Scientifique, Lawrence Berkeley National Laboratory, Laboratoire de physique des Solides, École Normale Supérieure - PSL, Sorbonne Université, CEA Paris-Saclay, Laboratoire de Physique de l'Ecole Normale Supérieure, Institut de minéralogie, de physique des matériaux et de cosmochimie, Université Paris Descartes, Université Pierre-et-Marie-Curie
OpenAlex ID: A5111679725
Optical-Absorption Edge and Raman Scattering in GexSe1−x Glasses
1973 · P. Tronc, M. Bensoussan, et al. · Physical review. B, Solid state · 316
Surface states from photoemission threshold measurements on a clean, cleaved, Si (111) surface
1975 · C. Sebenne, D. Bolmont, et al. · Physical review. B, Solid state · 150
High-resolution photoemission yield and surface states in semiconductors
1977 · C. A. Sebenne · Il Nuovo cimento della Società italiana di fisica. B/Il Nuovo cimento B · 100
Observation of Hollow Atoms or Ions above Insulator and Metal Surfaces
1996 · Briand J.-P., S. Thuriez, et al. · Physical Review Letters · 87
Structural and electronic properties of cleaved Si(111) upon room-temperature formation of an interface with Ag
1981 · D. Bolmont, Ping Chen, et al. · Physical review. B, Condensed matter · 81
Intrinsic and Defect-Induced Surface States of Cleaved GaAs(110)
1976 · G. M. Guichar, C. A. Sebenne, et al. · Physical Review Letters · 70
Room temperature adsorption and growth of Ga and In on cleaved Si(111)
1984 · D. Bolmont, P. Chen, et al. · Surface Science · 65
Heteroepitaxy of GaSe layered semiconductor compound on Si(111) 7 × 7 substrate: a Van der Waals epitaxy?
1994 · Le Thanh Vinh, M. Eddrief, et al. · Journal of Crystal Growth · 63
Low temperature formation of Si(111)7×7 surfaces from chemically prepared H/Si(111)-(1×1) surfaces
1994 · Le Thanh Vinh, M. Eddrief, et al. · Applied Physics Letters · 55
Effects of atomic hydrogen on the surface properties of cleaved GaAs(110)
1987 · O M'Hamedi, F Proix, et al. · Semiconductor Science and Technology · 52
Decay of hollow atoms above and below a surface
1996 · J.-P. Briand, G. Giardino, et al. · Physical Review A · 51
Photoemission yield spectroscopy of electronic surface states on germanium (111) surfaces
1979 · G.M. Guichar, G.A. Garry, et al. · Surface Science · 47
A transmission electron microscopy structural analysis of GaSe thin films grown on Si(111) substrates
1995 · A. Koëbel, Y. Zheng, et al. · Journal of Crystal Growth · 44
Room-temperature formation of the Ag/GaAs (110) interface
1982 · D Bolmont, P Chen, et al. · Journal of Physics C Solid State Physics · 39
Electronic surface states on cleaved GaP(110): Initial steps of the oxygen chemisorption
1979 · G. M. Guichar, C. A. Sebenne, et al. · Journal of Vacuum Science and Technology · 33
Surface properties of Si(111)7 × 7 upon NH3 adsorption and vacuum annealing
1991 · S.M Cherif, J.-P Lacharme, et al. · Surface Science · 32
Adsorption of Al on cleaved Si (111) at room temperature
1984 · Ping Chen, D Bolmont, et al. · Journal of Physics C Solid State Physics · 32
Raman scattering and local order in GexSe 1 -x glasses for 1/3 ≤ x ≤ 1/2
1977 · P. Tronc, M. Bensoussan, et al. · Journal de physique · 32
Structure dependent oxidation of clean Si(111) surfaces
1976 · G.M. Guichar, C.A. Sébenne, et al. · Surface Science · 32
Effect of Cu deposition on structural and electronic properties of cleaved Si(111) surfaces
1985 · A. Taleb-Ibrahimi, V. Mercier, et al. · Surface Science · 29
Electronic properties of cleaved Si(111) upon room-temperature deposition of Au
1984 · A. Taleb-Ibrahimi, C.A. Sébenne, et al. · Surface Science · 29
Effects of low oxygen exposures on the electronic surface properties of GaAs (110)
1979 · C.D. Thuault, G.M. Guichar, et al. · Surface Science · 29
Compositional and electronic properties of Si(001)2×1 upon diatomic sulfur interaction
1999 · J.P. Lacharme, N. Benazzi, et al. · Surface Science · 28
Brillouin scattering study of epitaxial InSe films grown on the surface
1997 · V Panella, G Carlotti, et al. · Journal of Physics Condensed Matter · 26
Photoemission yield under two-quantum excitation in Si
1981 · M. Bensoussan, J. M. Moison, et al. · Physical review. B, Condensed matter · 26
Works count: 170
Citation count: 2,643
H-index: 25
I10-index: 82
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