Work

Room temperature adsorption and growth of Ga and In on cleaved Si(111)

Year: 1984

Type: article

Source: Surface Science

DOI: 10.1016/0039-6028(84)90689-7

Authors: D. Bolmont, P. Chen, C.A. Sébenne, F. Proix

Institutions: Centre National de la Recherche Scientifique, Université Pierre-et-Marie-Curie

Language: English

Topic: Surface and Thin Film Phenomena

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1985368787

FWCI: 2.694

Cites: 19

Cited by: 65

Related to: 10