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M. Azize

Carbon-Nanotube-Embedded Hydrogel Sheets for Engineering Cardiac Constructs and Bioactuators
2013 · Su Ryon Shin, Sung Mi Jung, et al. · ACS Nano · 946
GaN-on-Si Vertical Schottky and p-n Diodes
2014 · Yuhao Zhang, Min Sun, et al. · IEEE Electron Device Letters · 189
Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes
2015 · Yuhao Zhang, Min Sun, et al. · IEEE Transactions on Electron Devices · 166
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Nanowire Channel InAlN/GaN HEMTs With High Linearity of $g_{\rm m}$ and $f_{\rm T}$
2013 · Dong Seup Lee, Han Wang, et al. · IEEE Electron Device Letters · 125
Effect of substrate-induced strain in the transport properties of AlGaN/GaN heterostructures
2010 · M. Azize, T. Palacios · Journal of Applied Physics · 82
Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE
2005 · Z. Bougrioua, M. Azize, et al. · physica status solidi (a) · 66
Top-down fabrication of AlGaN/GaN nanoribbons
2011 · M. Azize, T. Palacios · Applied Physics Letters · 56
High-Electron-Mobility Transistors Based on InAlN/GaN Nanoribbons
2011 · Mohamed Azize, Allen L. Hsu, et al. · IEEE Electron Device Letters · 37
High temperature behaviour of GaN HEMT devices on Si(111) and sapphire substrates
2008 · R. Cuerdo, F. Calle, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 36
Relaxation mechanisms in metal-organic vapor phase epitaxy grown Al-rich (Al,Ga)N∕GaN heterostructures
2004 · P. Vennéguès, Z. Bougrioua, et al. · Journal of Applied Physics · 36
AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination
2007 · Y. Cordier, M. Azize, et al. · Journal of Crystal Growth · 35
Impact of Al2O3 Passivation on AlGaN/GaN Nanoribbon High-Electron-Mobility Transistors
2015 · Sameer Joglekar, Mohamed Azize, et al. · IEEE Transactions on Electron Devices · 33
Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors
2016 · S. Joglekar, M. Azize, et al. · Applied Physics Letters · 31
Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs
2005 · Z. Bougrioua, M. Azize, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 28
Quantum and transport lifetimes of two-dimensional electrons gas in AlGaN∕GaN heterostructures
2005 · P. Lorenzini, Z. Bougrioua, et al. · Applied Physics Letters · 22
Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates
2007 · M. Azize, Z. Bougrioua, et al. · Journal of Crystal Growth · 20
Investigation of AlGaN∕AlN∕GaN heterostructures for magnetic sensor application from liquid helium temperature to 300°C
2008 · L. Bouguen, S. Contreras, et al. · Applied Physics Letters · 18
Subsurface Fe-doped semi-insulating GaN templates for inhibition of regrowth interface pollution in AlGaN/GaN HEMT structures
2007 · Y. Cordier, M. Azize, et al. · Journal of Crystal Growth · 18
Correlating stress generation and sheet resistance in InAlN/GaN nanoribbon high electron mobility transistors
2012 · Eric J. Jones, Mohamed Azize, et al. · Applied Physics Letters · 13
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Low electron mobility of field-effect transistor determined by modulated magnetoresistance
2007 · R. Tauk, J. Łusakowski, et al. · Journal of Applied Physics · 12
Photoinduced current transient spectroscopy of deep levels and transport mechanisms in iron-doped GaN thin films grown by low pressure-metalorganic vapor phase epitaxy
2007 · P. Muret, J. Pernot, et al. · Journal of Applied Physics · 12
Low temperature electron mobility and concentration under the gate of AlGaN∕GaN field effect transistors
2006 · M. Sakowicz, R. Tauk, et al. · Journal of Applied Physics · 12
Carrier profiles in Fe doped GaN layers grown by MOVPE
2005 · M. Azize, Z. Bougrioua, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 10
Advanced power electronic devices based on Gallium Nitride (GaN)
2015 · Daniel Piedra, Bin Lu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 9
Towards rapid nanoscale measurement of strain in III-nitride heterostructures
2013 · Eric Jones, David Cooper, et al. · Applied Physics Letters · 8
Works count: 53
Citation count: 2,068
H-index: 18
I10-index: 23
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