Work

Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs

Year: 2005

Type: article

Abstract: Highly resistive GaN (>108 Ωϒ) is grown by MOVPE on sapphire with dislocation density in the range 108 to 8 × 108 cm–2, using Fe modulation doping. High mobility 2DEGs are created at AlGaN/GaN:Fe interface for moderate Al composition: 2200 cm2/V/s at ns∼7.6 × 1012 cm–2. Good DC and RF small signal behaviour could be obtained in HEMTs processed on structures with less dislocated GaN:Fe template: IDSmax = 1.28 A/mm, gmmax ∼ 290 mS/mm and fT ∼ 23 GHz were measured for 0.2 µm transistors. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Source: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

DOI: 10.1002/pssc.200461588

Authors: Z. Bougrioua, M. Azize, A. Jimenez, A.‐F. Braña, P. Lorenzini, B. Beaumont, E. Muñoz, P. Gibart

Institutions: Centre National de la Recherche Scientifique, Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Saint-Gobain (France), Universidad de Alcalá, Universidad Politécnica de Madrid

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W2036062089

FWCI: 3.349

Cites:

Cited by: 28

Related to: 10