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H. Itoh
Observed name:
H Itoh
Institution:
Japan Atomic Energy Agency
Observed institutions:
Linköping University,
Japan Atomic Energy Agency,
University of Tsukuba,
Friedrich-Alexander-Universität Erlangen-Nürnberg,
Advanced Science Research Center,
Takasaki Advanced Radiation Research Institute
show all 6
OpenAlex ID:
A5111701541
Band gap narrowing of titanium dioxide by sulfur doping
2002
·
T. Umebayashi
, T. Yamaki
, et al.
·
Applied Physics Letters
·
1,455
Doping of SiC by Implantation of Boron and Aluminum
1997
·
T. Troffer
, M. Schadt
, et al.
·
physica status solidi (a)
·
303
Divacancy in 4H-SiC
2006
·
N. T. Son
, P. Carlsson
, et al.
·
Physical Review Letters
·
215
Intrinsic Defects in Cubic Silicon Carbide
1997
·
H. Itoh
, A. Kawasuso
, et al.
·
physica status solidi (a)
·
151
Fluorine-doping in titanium dioxide by ion implantation technique
2003
·
T. Yamaki
, T. Umebayashi
, et al.
·
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
·
139
Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S = 3 2 and C 3 v symmetry in n -type 4 H − SiC
2002
·
N. Mizuochi
, S. Yamasaki
, et al.
·
Physical review. B, Condensed matter
·
133
EPR identification of the negatively charged vacancy in diamond
1992
·
J. Isoya
, H. Kanda
, et al.
·
Physical review. B, Condensed matter
·
119
Radiation induced defects in CVD-grown 3C-SiC
1990
·
H. Itoh
, M. Yoshikawa
, et al.
·
IEEE Transactions on Nuclear Science
·
91
Identification of the Carbon Antisite-Vacancy Pair in 4H -SiC
2006
·
T. Umeda
, N. T. Son
, et al.
·
Physical Review Letters
·
87
Proton radiation analysis of multi-junction space solar cells
2003
·
T. Sumita
, M. Imaizumi
, et al.
·
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
·
67
Development of a new data collection system and chamber for microbeam and laser investigations of single event phenomena
2001
·
J.S Laird
, T Hirao
, et al.
·
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
·
65
EPR and theoretical studies of negatively charged carbon vacancy in 4H−SiC
2005
·
T. Umeda
, Y. Ishitsuka
, et al.
·
Physical Review B
·
59
Spin multiplicity and charge state of a silicon vacancy (TV2a) in 4H -SiC determined by pulsed ENDOR
2005
·
N. Mizuochi
, S. Yamasaki
, et al.
·
Physical Review B
·
55
PDF
Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance
1998
·
A. Kawasuso
, H. Itoh
, et al.
·
Applied Physics A
·
53
Effects of gamma-ray irradiation on cubic silicon carbide metal-oxide-semiconductor structure
1991
·
M. Yoshikawa
, H. Itoh
, et al.
·
Journal of Applied Physics
·
52
Energetically deep defect centers in vapor-phase grown zinc oxide
2007
·
T. Frank
, G. Pensl
, et al.
·
Applied Physics A
·
49
Temperature dependence of heavy ion-induced current transients in Si epilayer devices
2002
·
J.S. Laird
, T. Hirao
, et al.
·
IEEE Transactions on Nuclear Science
·
49
Analysis of single-ion multiple-bit upset in high-density DRAMs
2000
·
A. Makihara
, H. Shindou
, et al.
·
IEEE Transactions on Nuclear Science
·
49
Identification of positively charged carbon antisite-vacancy pairs in 4H−SiC
2007
·
T. Umeda
, J. Ishoya
, et al.
·
Physical Review B
·
48
Vacancies and deep levels in electron-irradiated 6 H SiC epilayers studied by positron annihilation and deep level transient spectroscopy
2001
·
A. Kawasuso
, F. Redmann
, et al.
·
Journal of Applied Physics
·
48
EPR studies of the isolated negatively charged silicon vacancies inn-type 4H - and 6H -SiC: Identification of C3v symmetry and silicon sites
2003
·
N. Mizuochi
, S. Yamasaki
, et al.
·
Physical review. B, Condensed matter
·
47
Annealing behavior of vacancies and Z1/2 levels in electron-irradiated 4H–SiC studied by positron annihilation and deep-level transient spectroscopy
2001
·
A. Kawasuso
, F. Redmann
, et al.
·
Applied Physics Letters
·
45
Performance of gamma irradiated P-channel 6H SiC MOSFETs: high total dose
2003
·
Kin Kiong Lee
, T. Ohshima
, et al.
·
IEEE Transactions on Nuclear Science
·
44
Formation and annihilation of intrinsic-related defect centers in high energy electron-irradiated or ion-implanted 4H– and 6H–silicon carbide
2001
·
M. Weidner
, T. Frank
, et al.
·
Physica B Condensed Matter
·
33
Strategies for improving radiation tolerance of Si space solar cells
2002
·
A Khan
, M Yamaguchi
, et al.
·
Solar Energy Materials and Solar Cells
·
32
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Works count:
92
Citation count:
4,094
H-index:
27
I10-index:
51
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