Work

Radiation induced defects in CVD-grown 3C-SiC

Year: 1990

Type: article

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/23.101184

Authors: H. Itoh, M. Yoshikawa, I. Nashiyama, S. Misawa, H. Okumura, S. Yoshida

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2102200520

FWCI: 3.824

Cites: 22

Cited by: 91

Related to: 10