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Masaaki Yuri

Observed names: M Yuri, M. YURI, M. Yuri, Masaaki YURI, Masaaki Yuri Masaaki Yuri, YURI MASAAKI, YURI, MASAAKI, 正昭 油利, 油利 正昭, 油利正昭
Institution: Panasonic (Japan)
OpenAlex ID: A5111702876
Separation of Thin GaN from Sapphire by Laser Lift-Off Technique
2011 · Tetsuzo Ueda, Masahiro Ishida, et al. · Japanese Journal of Applied Physics · 89
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High-Extraction-Efficiency Blue Light-Emitting Diode Using Extended-Pitch Photonic Crystal
2004 · Kenji Orita, Satoshi Tamura, et al. · Japanese Journal of Applied Physics · 74
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Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model
2001 · T. Takayama, M. Yuri, et al. · Journal of Crystal Growth · 68
Analysis of Diffusion-Related Gradual Degradation of InGaN-Based Laser Diodes
2012 · Kenji Orita, Matteo Meneghini, et al. · IEEE Journal of Quantum Electronics · 57
600 mW CW single-mode GaAlAs triple-quantum-well laser with a new index guided structure
1993 · O. Imafuji, T. Takayama, et al. · IEEE Journal of Quantum Electronics · 46
Theoretical predictions of unstable two-phase regions in wurtzite group-III-nitride-based ternary and quaternary material systems using modified valence force field model
2001 · Toru Takayama, Masaaki Yuri, et al. · Journal of Applied Physics · 42
High-power and high-temperature operation of Mg-doped AlGaInP-based red laser diodes
2004 · T. Onishi, K. Inoue, et al. · IEEE Journal of Quantum Electronics · 40
Structural investigation of sapphire surface after nitridation
1998 · Tadao Hashimoto, Yoshitami Terakoshi, et al. · Journal of Crystal Growth · 40
Theoretical analysis of unstable two-phase region and microscopic structure in wurtzite and zinc-blende InGaN using modified valence force field model
2000 · Toru Takayama, Masaaki Yuri, et al. · Journal of Applied Physics · 39
Effect of misfit strain on physical properties of InGaP grown by metalorganic molecular-beam epitaxy
1990 · Kazunari Ozasa, Masaaki Yuri, et al. · Journal of Applied Physics · 39
Extensive Analysis of the Degradation of Blu-Ray Laser Diodes
2008 · Matteo Meneghini, Gaudenzio Meneghesso, et al. · IEEE Electron Device Letters · 38
A review on the reliability of GaN-based laser diodes
2010 · Nicola Trivellin, Matteo Meneghini, et al. · IEEE International Reliability Physics Symposium proceedings · 34
Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition
1999 · Tadao Hashimoto Tadao Hashimoto, Masaaki Yuri Masaaki Yuri, et al. · Japanese Journal of Applied Physics · 33
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Drastic reduction of threading dislocation in GaN regrown on grooved stripe structure
2000 · M Ishida, M Ogawa, et al. · Journal of Crystal Growth · 29
Vertical InGaN‐based blue light emitting diode with plated metal base fabricated using laser lift‐off technique
2003 · Tetsuzo Ueda, Masahiro Ishida, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 25
Metalorganic molecular-beam epitaxy of InGaP
1989 · Kazunari Ozasa, Masaaki Yuri, et al. · Journal of Applied Physics · 25
A GaAs MCM power amplifier of 3.6 V operation with high efficiency of 49% for 0.9 GHz digital cellular phone systems
2002 · K. Tateoka, A. Sugimura, et al. · IEEE MTT-S International Microwave Symposium digest · 22
Degradation of InGaN-Based Laser Diodes Related to Nonradiative Recombination
2009 · M. Meneghini, N. Trivellin, et al. · IEEE Electron Device Letters · 21
A high efficiency GaAs MCM power amplifier for 1.9 GHz digital cordless telephones
2002 · S. Makioka, K. Tateoka, et al. · IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium (MMWMC) · 21
Vapor phase epitaxy growth of GaN on pulsed laser deposited ZnO buffer layer
1998 · T Ueda, T.-F Huang, et al. · Journal of Crystal Growth · 21
100-mW high-power angled-stripe superluminescent diodes with a new real refractive-index-guided self-aligned structure
1996 · T. Takayama, O. Imafuji, et al. · IEEE Journal of Quantum Electronics · 20
Analysis of Unstable Two-Phase Region in Wurtzite Group III Nitride Ternary Alloy Using Modified Valence Force Field Model
2000 · Toru Takayama, Masaaki Yuri, et al. · Japanese Journal of Applied Physics · 18
Laser lift-off of very thin AlGaN film from sapphire using selective decomposition of GaN interlayer
2003 · Tetsuzo Ueda, Masahiro Ishida, et al. · Applied Surface Science · 17
Quantitative study of nitridated sapphire surfaces by x-ray photoelectron spectroscopy
1999 · Tadao Hashimoto, Yoshitami Terakoshi, et al. · Journal of Applied Physics · 17
Analysis of the Role of Current, Temperature, and Optical Power in the Degradation of InGaN-Based Laser Diodes
2009 · Matteo Meneghini, Nicola Trivellin, et al. · IEEE Transactions on Electron Devices · 16
Works count: 137
Citation count: 1,145
H-index: 20
I10-index: 37
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