Work

Structural investigation of sapphire surface after nitridation

Year: 1998

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/s0022-0248(98)00255-3

Authors: Tadao Hashimoto, Yoshitami Terakoshi, Masahiro Ishida, Masaaki Yuri, Osamu Imafuji, Takashi Sugino, Akio Yoshikawa, Kunio Itoh

Institutions: Panasonic (Japan), The University of Osaka

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W2087516191

FWCI: 0.875

Cites: 9

Cited by: 40

Related to: 10