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O. Imafuji

Observed names: IMAFUJI, OSAMU, O Imafuji, Osamu IMAFUJI, Osamu Imafuji, Osamu Imafuji Osamu Imafuji
Institution: Panasonic (Japan)
OpenAlex ID: A5113593635
Continuous Wave Operation of GaN Vertical Cavity Surface Emitting Lasers at Room Temperature
2012 · Toshikazu Onishi, Osamu Imafuji, et al. · IEEE Journal of Quantum Electronics · 118
Optical-loss suppressed InGaN laser diodes using undoped thick waveguide structure
2016 · Masao Kawaguchi, Osamu Imafuji, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 61
600 mW CW single-mode GaAlAs triple-quantum-well laser with a new index guided structure
1993 · O. Imafuji, T. Takayama, et al. · IEEE Journal of Quantum Electronics · 46
Structural investigation of sapphire surface after nitridation
1998 · Tadao Hashimoto, Yoshitami Terakoshi, et al. · Journal of Crystal Growth · 40
Reduction of Threading Dislocations in GaN on Sapphire by Buffer Layer Annealing in Low-Pressure Metalorganic Chemical Vapor Deposition
1999 · Tadao Hashimoto Tadao Hashimoto, Masaaki Yuri Masaaki Yuri, et al. · Japanese Journal of Applied Physics · 33
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High-power and high-temperature operation of an InGaN laser over 3 W at 85 °C using a novel double-heat-flow packaging technology
2016 · Shinichiro Nozaki, Shinji Yoshida, et al. · Japanese Journal of Applied Physics · 29
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High power subterahertz electromagnetic wave radiation from GaN photoconductive switch
2007 · Osamu Imafuji, Brahm Pal Singh, et al. · Applied Physics Letters · 29
Drastic reduction of threading dislocation in GaN regrown on grooved stripe structure
2000 · M Ishida, M Ogawa, et al. · Journal of Crystal Growth · 29
100-mW high-power angled-stripe superluminescent diodes with a new real refractive-index-guided self-aligned structure
1996 · T. Takayama, O. Imafuji, et al. · IEEE Journal of Quantum Electronics · 20
Quantitative study of nitridated sapphire surfaces by x-ray photoelectron spectroscopy
1999 · Tadao Hashimoto, Yoshitami Terakoshi, et al. · Journal of Applied Physics · 17
EXAFS Study of Cation Distribution in Nickel Aluminate Ferrites
1991 · Takeshi Yao, Osamu Imafuji, et al. · Journal of the American Ceramic Society · 17
Low-Noise and High-Power GaAlAs Laser Diodes with a New Real Refractive Index Guided Structure
1995 · Toru Takayama, Osamu Imafuji, et al. · Japanese Journal of Applied Physics · 16
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Low operating current and high-temperature operation of 650-nm AlGaInP high-power laser diodes with real refractive index guided self-aligned structure
1999 · O. Imafuji, T. Fukuhisa, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 14
Two-dimensional analysis of self-sustained pulsation for narrow-stripe AlGaAs lasers
1995 · M. Yuri, S. Harris, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 14
Low operating current self-sustained pulsation GaAlAs laser diodes with a real refractive index guided structure
1994 · T. Takayama, O. Imafuji, et al. · Applied Physics Letters · 13
Growth of GaN Thin Films on Sapphire Substrate by Low Pressure MOCVD
1997 · M. Ishida, T. Hashimoto, et al. · MRS Proceedings · 11
800 mW peak-power self-sustained pulsation GaAlAs laser diodes
1995 · T. Takayama, O. Imafuji, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 10
Design and lasing characteristics of GaN vertical elongated cavity surface emitting lasers
2014 · Masao Kawaguchi, Osamu Imafuji, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 8
Inheritance of zinc-blende structure from substrate in growth of GaN by MOCVD
1996 · Tadao Hashimoto, Osamu Imafuji, et al. · Journal of Crystal Growth · 8
Digital Versatile Disc Read-Only Disc, Rewritable Disc and Compact Disc Compatible Optical Pickup with a Two-Wavelength Laser Diode Unit
2002 · Eishin Mori, Yoshiaki Komma, et al. · Japanese Journal of Applied Physics · 6
Monolithically Integrated Dual-Wavelength Self-Sustained Pulsating Laser Diodes with Real Refractive Index Guided Self-Aligned Structure
2001 · Toshikazu Onishi, Osamu Imafuji, et al. · Japanese Journal of Applied Physics · 6
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Low operating current and high temperature operationof650 nm AlGaInP visible laser diodes with real refractiveindex guided self-aligned structure
1997 · O. Imafuji, M. Yuri, et al. · Electronics Letters · 4
High power single mode operation of long cavity GaAlAs lasers with nonabsorbing mirror buried twin ridge substrate structure
1992 · H. Naito, O. Imafuji, et al. · Applied Physics Letters · 4
Reduction of Beam Divergence Angle by Low-Refractive-Index Layers Introduced to Real-Refractive-Index-Guided GaAlAs High-Power Laser Diodes
1997 · Tadao Hashimoto Tadao Hashimoto, Osamu Imafuji Osamu Imafuji, et al. · Japanese Journal of Applied Physics · 3
Small-astigmatism, low-noise, and high-power self-sustained pulsation multiple-quantum-well laser diodes with a real refractive index guided self-aligned structure
1996 · T. Takayama, O. Imafuji, et al. · Applied Physics Letters · 3
Works count: 47
Citation count: 575
H-index: 14
I10-index: 17
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