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Toshikazu Shimada

Chemical bonding states in the amorphous SixC1–x: H system studied by X-ray photoemission spectroscopy and infrared absorption spectra
1981 · Yoshifumi Katayama, Katsuhisa Usami, et al. · Philosophical Magazine B · 145
Infrared Spectra of Amorphous Silicon-Fluorine Alloys Prepared by Sputtering in Fluorosilane-Argon Gas Mixture
1980 · Toshikazu Shimada, Yoshifumi Katayama, et al. · Japanese Journal of Applied Physics · 69
Bond-length relaxation in crystalline Si1−x Gex alloys: An extended x-ray-absorption fine-structure study
1992 · Hiroshi Kajiyama, Shin-ichi Muramatsu, et al. · Physical review. B, Condensed matter · 66
Optical studies of deep-center luminescence in CdS
1974 · Yasuhiro Shiraki, Toshikazu Shimada, et al. · Journal of Applied Physics · 51
Behavior of Plasmons in an Amorphous Silicon-Carbon Alloy System Studied by X-Ray Photoelectron Spectroscopy
1981 · Yoshifumi Katayama, Toshikazu Shimada, et al. · Physical Review Letters · 50
Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots
2006 · Yoshishige Tsuchiya, Kosuke Takai, et al. · Journal of Applied Physics · 47
Microstructure of Visible Light Emitting Porous Silicon
1992 · Akio Nishida, Kiyokazu Nakagawa, et al. · Japanese Journal of Applied Physics · 40
Chemical Vapor Deposition of a-SiGe:H Films Utilizing a Microwave-Excited Plasma
1987 · Takeshi Watanabe, Masahiro Tanaka, et al. · Japanese Journal of Applied Physics · 38
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Fine Structure of Porous Si with Visible Photoluminescence
1992 · Kiyokazu Nakagawa, Akio Nishida, et al. · Japanese Journal of Applied Physics · 28
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Characteristics of thermally induced acoustic emission from nanoporous silicon device under full digital operation
2013 · Nobuyoshi Koshida, Daihei Hippo, et al. · Applied Physics Letters · 27
Gap States in a-SiGe:H Examined by the Constant Photocurrent Method
1990 · Takeshi Watanabe, Kazufumi Azuma, et al. · Japanese Journal of Applied Physics · 26
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Preparation and properties of microcrystalline silicon films using photochemical vapor deposition
1983 · Tadashi Saitoh, Toshikazu Shimada, et al. · Journal of Non-Crystalline Solids · 26
Quantum-assisted photoelectric gain effects in perovskite solar cells
2020 · Ying-Chiao Wang, Shao-Ku Huang, et al. · NPG Asia Materials · 25
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Chemical Vapor Deposition of a-Si:H Films Utilizing a Microwave Excited Ar Plasma Stream
1986 · Takeshi Watanabe, Kazufumi Azuma, et al. · Japanese Journal of Applied Physics · 25
Raman scattering in low wavenumber region as a new probe to structural properties of microcrystalline silicon
1983 · Toshikazu Shimada, Yoshifumi Katayama, et al. · Journal of Non-Crystalline Solids · 25
Suppression of Ge surface segregation during Si molecular beam epitaxy by atomic and molecular hydrogen irradiation
1995 · Kiyokazu Nakagawa, Akio Nishida, et al. · Journal of Crystal Growth · 24
Microwave-Excited Plasma CVD of a-Si:H Films Utilizing a Hydrogen Plasma Stream or by Direct Excitation of Silane
1987 · Takeshi Watanabe, Masahiro Tanaka, et al. · Japanese Journal of Applied Physics · 24
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Control of Optical Gap in a-SixC1-x: H Alloy Films Produced by Reactive Sputtering Method
1980 · Yoshifumi Katayama, Toshikazu Shimada, et al. · Japanese Journal of Applied Physics · 24
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Medium-Range Order of Amorphous Silicon Germanium Alloys: Small-Angle X-Ray Scattering Study
1989 · Shin-ichi Muramatsu, Toshikazu Shimada, et al. · Japanese Journal of Applied Physics · 21
Edge emissions of ion-implanted CdS
1977 · Yasuhiro Shiraki, Toshikazu Shimada, et al. · Journal of Physics and Chemistry of Solids · 20
Three-Dimensional Numerical Analysis of Switching Properties of High-Speed and Nonvolatile Nanoelectromechanical Memory
2007 · Tasuku Nagami, Hiroshi Mizuta, et al. · IEEE Transactions on Electron Devices · 19
Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators
1989 · Haruo Itoh, Sunao Matsubara, et al. · Japanese Journal of Applied Physics · 19
Valence band structure of hydrogenated amorphous silicon-carbon alloys
1983 · Yoshifumi Katayama, Toshikazu Shimada, et al. · Journal of Non-Crystalline Solids · 19
Effect of Atomic and Molecular Hydrogen Irradiation on Ge Surface Segregation during Si Molecular Beam Epitaxy
1994 · Kiyokazu Nakagawa, Akio Nishida, et al. · Japanese Journal of Applied Physics · 15
Observation of Si-2p Level Shift in Hydrogenated Amorphous Silicon by X-Ray Photoelectron Spectroscopy
1980 · Katsuhisa Usami, Toshikazu Shimada, et al. · Japanese Journal of Applied Physics · 13
Works count: 56
Citation count: 1,023
H-index: 20
I10-index: 27
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