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Yohei Yukawa
Observed name:
Yohei Yukawa Yohei Yukawa
Institution:
Meijo University
Observed institution:
Meijo University
OpenAlex ID:
A5111732604
Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices
2001
·
Shigeo Yamaguchi
, Masayoshi Kosaki
, et al.
·
Applied Physics Letters
·
48
Control of strain in GaN using an In doping-induced hardening effect
2001
·
Shigeo Yamaguchi
, Michihiko Kariya
, et al.
·
Physical review. B, Condensed matter
·
31
Control of strain in GaN by a combination of H2 and N2 carrier gases
2001
·
Shigeo Yamaguchi
, Michihiko Kariya
, et al.
·
Journal of Applied Physics
·
21
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
2002
·
Shigeo Yamaguchi
, Yasuo Iwamura
, et al.
·
Applied Physics Letters
·
18
Effect on GaN/Al0.17Ga0.83N and Al0.05Ga0.95N/Al0.17Ga0.83N Quantum Wells by Isoelectronic In-Doping during Metalorganic Vapor Phase Epitaxy
2000
·
Michihiko Kariya Michihiko Kariya
, Shugo Nitta Shugo Nitta
, et al.
·
Japanese Journal of Applied Physics
·
10
In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology
2002
·
Shugo Nitta
, Yohei Yukawa
, et al.
·
Materials Science and Engineering B
·
8
Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN
2001
·
Masayoshi Kosaki
, Shingo Mochizuki
, et al.
·
Japanese Journal of Applied Physics
·
8
PDF
MOVPE growth and characterization of Al1−xInxN/GaN multiple layers
2002
·
Masayoshi Kosaki
, Shingo Mochizuki
, et al.
·
Journal of Crystal Growth
·
1
Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN : Semiconductors
2001
·
Masayoshi Kosaki
, Shingo Mochizuki
, et al.
·
Japanese Journal of Applied Physics
Crystalline and Electrical Properties of AlInN/GaN and AlN/GaN superlattices on GaN Grown by Metalorganic Vapor Phase Epitaxy
2001
·
Shigeo Yamaguchi
, Yasuo Iwamura
, et al.
·
MRS Proceedings
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Works count:
10
Citation count:
145
H-index:
7
I10-index:
5
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