Work

Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN

Year: 2001

Type: article

Abstract: Al1-x In x N epilayers with a thickness of 20 nm grown on GaN were characterized. It was found that the surface roughness of very thin Al1-x In x N is more sensitive to the growth temperature than to the lattice mismatch to GaN. Multiple layers of (Al0.95In0.05N/Al0.10Ga0.90N)5 were grown at different temperatures. X-ray diffraction measurement revealed that the sample grown at 800°C is of high quality, showing up to five orders of sharp satellite peaks, while no clear satellite peaks are observed from the sample grown at 720°C. Transmission electron microscopy observation revealed that multiple layers grown at 800°C exhibit very sharp interfaces.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.40.l420