Author

Olivier De Gryse

Observed names: O De Gryse, O. De Gryse

OpenAlex ID: A5111846932

Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques

2002 · O. De Gryse, P. Clauws, et al. · Journal of Applied Physics · 32

Multiple growth and characterization of thick diamond single crystals using chemical vapour deposition working in pulsed mode

2006 · A. Tallaire, J. Achard, et al. · Journal of Crystal Growth · 30

Critical precipitate size revisited and implications for oxygen precipitation in silicon

2005 · Jan Vanhellemont, Olivier De Gryse, et al. · Applied Physics Letters · 25

Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon

2002 · E. Simoen, C. Claeys, et al. · Applied Physics Letters · 25

PDF

Grown-In Lattice Defects and Diffusion in Czochralski-Grown Germanium

2004 · Jan Vanhellemont, Olivier De Gryse, et al. · Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum · 21

Infrared analysis of the precipitated oxide phase in silicon and germanium

2006 · O. De Gryse, P. Vanmeerbeek, et al. · Physica B Condensed Matter · 18

Quantification of the low temperature infrared vibrational modes from interstitial oxygen in silicon

2000 · O. De Gryse, P. Clauws · Journal of Applied Physics · 16

Recent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon

2005 · Jan Vanhellemont, Steven Hens, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 15

A model for the formation of lattice defects at silicon oxide precipitates in silicon

2003 · J. Vanhellemont, O. De Gryse, et al. · Physica B Condensed Matter · 12

Deep Levels in Oxygenated n-Type High-Resistivity FZ Silicon before and after a Low-Temperature Hydrogenation Step

2003 · E. Simoen, C. Claeys, et al. · Journal of The Electrochemical Society · 12

Determination of Stoichiometry and Oxygen Content in Platelike and Octahedral Oxygen Precipitates in Silicon with FT-IR Spectroscopy

1997 · Olivier De Gryse, Paul Clauws, et al. · Materials science forum · 11

Determination of oxide precipitate phase and morphology in silicon and germanium using infra-red absorption spectroscopy

2006 · Olivier De Gryse, Jan Vanhellemont, et al. · Materials Science in Semiconductor Processing · 10

DLTS Studies of high-temperature electron irradiated Cz n-Si

2004 · V. Neimash, M. Kras'ko, et al. · physica status solidi (a) · 9

Characterization of Oxide Precipitates in Heavily B-Doped Silicon by Infrared Spectroscopy

2004 · O. De Gryse, P. Clauws, et al. · Journal of The Electrochemical Society · 9

A novel approach to analyse FTIR spectra of precipitates in boron-doped silicon

2003 · O De Gryse, J Vanhellemont, et al. · Physica B Condensed Matter · 6

Accurate infrared spectroscopy determination of interstitial and precipitated oxygen in highly doped Czochralski-grown silicon

1999 · O. De Gryse, P. Clauws, et al. · Review of Scientific Instruments · 6

Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM

2001 · O. De Gryse, P. Clauws, et al. · Physica B Condensed Matter · 5

A criterion for the formation of stacking faults at incoherent spheroidal precipitates and application to silicon oxide in silicon

2006 · Jan Vanhellemont, Olivier De Gryse, et al. · physica status solidi (a) · 4

Characterization of bulk microdefects in Ge single crystals

2004 · D. Poelman, O. De Gryse, et al. · Journal of Applied Physics · 4

Extended Defects in Silicon: an Old and New Story

2003 · Jan Vanhellemont, Olivier De Gryse, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 3

Precipitation and extended defect formation in silicon

2005 · Jan Vanhellemont, Olivier De Gryse, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2

Optical spectroscopy of oxygen precipitates in heavily doped p-type silicon

2002 · E Simoen, R Loo, et al. · Journal of Physics Condensed Matter · 2

On the nucleation of bulk stacking faults in CZ silicon

2002 · Jan Vanhellemont, Olivier De Gryse, et al. · Ghent University Academic Bibliography (Ghent University) · 1

Recent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon

2005 · Jan Vanhellemont, Steven Hens, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

The behaviour of oxygen in oxygenated n-type high resistivity Float-Zone silicon

2002 · Eddy Simoen, Cor Claeys, et al. · Ghent University Academic Bibliography (Ghent University)

Works count: 30

Citation count: 278

H-index: 11

I10-index: 12