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Jean C. Guibert
Observed names:
J. -C. GUIBERT,
J. C. Guibert,
J. Ch. Guibert,
J.-C. Guibert,
J.C. Guibert,
Jean-Charles Guibert Jean-Charles Guibert
show all 6
Institutions:
Commissariat à l'Énergie Atomique et aux Énergies Alternatives,
CEA Grenoble,
Laboratoire d'Électronique des Technologies de l'Information
Observed institutions:
Commissariat à l'Énergie Atomique et aux Énergies Alternatives,
CEA Grenoble,
Laboratoire d'Électronique des Technologies de l'Information
OpenAlex ID:
A5111875637
Characterization of dry developed processes using silylation application to the PRIME process
1990
·
Christophe Pierrat
, Hubert Bono
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
6
Nanotechnologies and nanolithography in Europe
2002
·
Jean C. Guibert
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
5
Dry etching for high-resolution maskmaking
1990
·
Serge V. Tedesco
, Christophe Pierrat
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
4
0.6µm CMOS Technology Using Desire Process
1989
·
F. Vinet
, M. Chevallier
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
4
An improved bilayer PMGI(1) lithographic process
1987
·
J.C. Guibert
, M. Chevalier
, et al.
·
Microelectronic Engineering
·
4
Elimination of Stress‐Induced Defects in Polybuffered LOCOS Isolation Scheme for Sub‐0.25 μm Designs
1997
·
S. Deleonibus
, F. Martin
, et al.
·
Journal of The Electrochemical Society
·
2
PDF
Differential Body Effect Analysis and Optimization of the LArge Tilt Implanted Sloped Shallow Trench Isolation Process (LATI-STI)
1996
·
Simon Deleonibus
, Michel Heitzmann
, et al.
·
Japanese Journal of Applied Physics
·
1
PDF
A Post Gigabit Generation Flash Memory Shallow Trench Isolation Scheme. The LATI-STI Process (LArge Tilt Implanted Sloped Trench Isolation) Using 100% CMP Planarization
1995
·
S. DELEONIBUS
, M. HEITZMANN
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
·
1
Lithography trends for sub-0.1μm technologies
2002
·
J.-C. Guibert
·
CAS proceedings
The Oxidized Amorphous Silicon Improved LOCal Isolation (OASI-LOCI) concept
1997
·
S. Deleonibus
, M. Heitzmann
, et al.
·
European Solid-State Device Research Conference
Shallow Trench Isolation for High Density Flash Memories
1996
·
S. Deleonibus
, M. Heitzmann
, et al.
·
European Solid-State Device Research Conference
High Performance Shallow Trench Isolation for High Density Flash Memory Cells
1996
·
S. Deleonibus
, M. Heitzmann
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
Etude Des Reactions De Coupure Des Liaisons O‐Si(CH3)3 Dans Des Polystyrenes Silicies En Presence De Sels De Triphenylsulfonium Avec Ou Sans Perylene Sous Irradiation UV Et Visible Et En Couche Mince
1992
·
N. Madit
, L. Giral
, et al.
·
Bulletin des Sociétés Chimiques Belges
PRIME process: an alternative to multiple layer resist systems and high accelerating voltage for e-beam lithography
1990
·
Serge V. Tedesco
, Christophe Pierrat
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
A Contrast Enhanced Reflectionless Process (CER)
1987
·
J. C. Guibert
, Ph. Brincard
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
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Works count:
15
Citation count:
27
H-index:
4
I10-index:
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