Get started
Author

St. Trellenkamp

Observed name: St Trellenkamp
OpenAlex ID: A5111875678
Hall effect measurements on InAs nanowires
2012 · Ch. Blömers, T. Grap, et al. · Applied Physics Letters · 111
Signatures of interaction-induced helical gaps in nanowire quantum point contacts
2017 · S. Heedt, N. Traverso Ziani, et al. · Nature Physics · 90
PDF
Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography
2012 · S. Brose, S. Danylyuk, et al. · Thin Solid Films · 32
Patterning of 25-nm-wide silicon webs with an aspect ratio of 13
2003 · St. Trellenkamp, J. Moers, et al. · Microelectronic Engineering · 30
Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement
2021 · M. Mikulics, P. Kordoš, et al. · Applied Physics Letters · 29
Non-uniform distribution of induced strain in a gate-recessed AlGaN/GaN structure evaluated by micro-PL measurements
2012 · M Mikulics, H Hardtdegen, et al. · Semiconductor Science and Technology · 14
Top contacts for vertical double-gate MOSFETs
2002 · J Moers, St Trellenkamp, et al. · Microelectronic Engineering · 11
Optimized marker definition for high overlay accuracy e-beam lithography
2012 · J. Moers, St. Trellenkamp, et al. · Microelectronic Engineering · 10
Phenomenological considerations of resistively switching TiO2 in nano crossbar arrays
2009 · C. Nauenheim, C. Kugeler, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 10
Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures
2004 · S. M. Kluth, D. Álvarez, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 10
PDF
The disposable dot FET: A strained silicon channel on top of removed SiGe
2009 · J. Gerharz, G. Mussler, et al. · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 4
Vertical double-gate MOSFETs
2005 · J. Moers, St. Trellenkamp, et al. · International Conference on Advanced Semiconductor Devices and Microsystems · 3
InGaN mesoscopic structures for low energy consumption nano-opto-electronics
2016 · H. Luth, M. Mikulics, et al. · International Conference on Advanced Semiconductor Devices and Microsystems · 2
Influence of the epitaxial growth and device processing on the overlay accuracy during processing of the d-DotFET
2009 · J. Moers, J. Gerharz, et al. · Thin Solid Films · 2
Fabrication of UV sources for novel lithographical techniques: Development of nano-LED etching procedures
2016 · J. Moers, M. Mikulics, et al. · International Conference on Advanced Semiconductor Devices and Microsystems · 1
III-nitride nano-LEDs for single photon lithography
2014 · St. Trellenkamp, M. Mikulics, et al. · International Conference on Advanced Semiconductor Devices and Microsystems · 1
Novel double-level-T-gate technology
2014 · A. Fox, M. Mikulics, et al. · International Conference on Advanced Semiconductor Devices and Microsystems
Templates for highly ordered SiGe-QD arrays for single photon detection
2014 · J. Moers, N. P. Stcpina, et al. · International Conference on Advanced Semiconductor Devices and Microsystems
Tuning the spectral sensitivity of vertical InN nanopyramid based photodetectors by means of band gap engineering and/or nanostructure size control
2012 · St. Trellenkamp, M. Mikulics, et al. · International Conference on Advanced Semiconductor Devices and Microsystems
Nanosession: Low‐Dimensional Transport and Ballistic Effects
2012 · Arkadius Ganczarczyk, Martin Geller, et al. · Frontiers in Electronic Materials
The disposable Dot Field Effect Transistor: Process flow and overlay requirements
2008 · J. Moers, J. Gerharz, et al. · International Conference on Advanced Semiconductor Devices and Microsystems
Thin low-temperature gate oxides for vertical field-effect transistors
2003 · M. Goryll, J. Moers, et al. · International Conference on Advanced Semiconductor Devices and Microsystems
Process steps for a double gate MOSFET with vertical layout
2003 · St. Trellenkamp, J. Moers, et al. · International Conference on Advanced Semiconductor Devices and Microsystems
Wet low-temperature gate oxidation for nanoscale vertical field-effect transistors
2003 · M Goryll, J Moers, et al. · Physica E Low-dimensional Systems and Nanostructures
Vertical Double-Gate MOSFET Based on Epitaxial Growth
2001 · J. Moers, St. Trellenkamp, et al. · Open Repository and Bibliography (University of Luxembourg)
Works count: 25
Citation count: 360
H-index: 10
I10-index: 10
Year
Topic
Type