Work

Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures

Year: 2004

Type: article

Abstract: B implants of 1keV, 1×1015at.cm−2 into 125-nm-wide, free-standing Si nanostructures have been characterized using scanning spreading resistance microscopy following a 0s, 1050°C anneal in N2. A curved diffusion front has been observed. B in the center of the ridge diffuses further than at the sides. A similar effect has been observed in SUPREM-IV simulations. It is attributed to a reduction in transient enhanced diffusion close to the vertical surfaces due to recombination of ion-implantation-induced excess Si self-interstitials.

Source: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

DOI: 10.1116/1.1839898

Authors: S. M. Kluth, D. Álvarez, St. Trellenkamp, J. Moers, S. Mantl, J. Kretz, W. Vandervorst

Institutions: Australian National University, Forschungszentrum Jülich, Infineon Technologies (Germany), IMEC, KU Leuven

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W1993946166

FWCI: 0.398

Cites: 12

Cited by: 10

Related to: 10