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Jürgen Moers

Observed names: J Moers, J. Moers, Juergen Moers, Moers, J., Moers, Jürgen
OpenAlex ID: A5113893502
HNF - Helmholtz Nano Facility
2017 · Wolfgang Albrecht, Juergen Moers, et al. · Journal of large-scale research facilities JLSRF · 136
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Hall effect measurements on InAs nanowires
2012 · Ch. Blömers, T. Grap, et al. · Applied Physics Letters · 111
X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor
2011 · Nina Hrauda, Jianjun Zhang, et al. · Nano Letters · 74
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N-Channel field-effect transistors with floating gates for extracellular recordings
2005 · Sven Meyburg, Michael Goryll, et al. · Biosensors and Bioelectronics · 51
n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility
2010 · V. Jovanovi, C. Biasotto, et al. · IEEE Electron Device Letters · 45
Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography
2012 · S. Brose, S. Danylyuk, et al. · Thin Solid Films · 32
Patterning of 25-nm-wide silicon webs with an aspect ratio of 13
2003 · St. Trellenkamp, J. Moers, et al. · Microelectronic Engineering · 30
Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement
2021 · M. Mikulics, P. Kordoš, et al. · Applied Physics Letters · 29
Turning the world vertical: MOSFETs with current flow perpendicular to the wafer surface
2007 · J. Moers · Applied Physics A · 29
Selectively grown vertical Si- p MOS transistorwith short channel lengths
1996 · D. Behammer, L. Vescan, et al. · Electronics Letters · 26
Advanced CMOS process for floating gate field-effect transistors in bioelectronic applications
2007 · Sven Meyburg, Regina Stockmann, et al. · Sensors and Actuators B Chemical · 23
Selectively grown vertical Si MOS transistor with reduced overlap capacitances
1998 · D Klaes, J Moers, et al. · Thin Solid Films · 22
Integration of MOSFETs with SiGe dots as stressor material
2011 · L.K. Nanver, V. Jovanović, et al. · Solid-State Electronics · 18
Single cell recordings with pairs of complementary transistors
2006 · Sven Meyburg, Günter Wrobel, et al. · Applied Physics Letters · 18
Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth
1999 · J Moers, D Klaes, et al. · Solid-State Electronics · 17
Top contacts for vertical double-gate MOSFETs
2002 · J Moers, St Trellenkamp, et al. · Microelectronic Engineering · 11
Band offsets at heavily strained III - V interfaces
1997 · C Ohler, A Förster, et al. · Journal of Physics D Applied Physics · 11
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Optimized marker definition for high overlay accuracy e-beam lithography
2012 · J. Moers, St. Trellenkamp, et al. · Microelectronic Engineering · 10
Giant mesoscopic photoconductance fluctuations in Ge/Si quantum dot system
2011 · N. P. Stepina, E. S. Koptev, et al. · Applied Physics Letters · 10
Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures
2004 · S. M. Kluth, D. Álvarez, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 10
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Self‐assembled GaN nanostructures by dry etching and their optical properties
2012 · Anna Haab, Martin Mikulics, et al. · physica status solidi (a) · 7
Vertical silicon MOSFETs based on selective epitaxial growth
2005 · J. Moers, A. Tonnesmann, et al. · International Conference on Advanced Semiconductor Devices and Microsystems · 7
Vertical p-channel double-gate MOSFETs
2004 · J. Moers, S. Trellenkamp, et al. · IEEE Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS) · 7
Strain dependence of the valence-band offset in arsenide compound heterojunctions determined by photoelectron spectroscopy
1995 · C. Ohler, J. Moers, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 7
Vertical Double-Gate MOSFET based on epitaxial growth by LPCVD
2001 · J. Moers, S. Trellenkamp, et al. · European Solid-State Device Research Conference · 6
Works count: 107
Citation count: 790
H-index: 15
I10-index: 20
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