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Colin E. C. Wood

Observed names: C E C Wood, C. E. C WOOD, C. E. C. Wood, C. Wood, C.E. Wood, C.E.C Wood, C.E.C. Wood, Colin E. Wood, Colin E.C Wood, Colin E.C. Wood, Colin Wood
Observed institutions: Lawrence Livermore National Laboratory, DEVCOM Army Research Laboratory, Office of Naval Research, Cornell University, General Electric (United Kingdom), GEC (United Kingdom), Varian Medical Systems (United States), Indian Institute of Science Bangalore, University of Maryland, College Park, University of Maryland, Baltimore County
OpenAlex ID: A5111887694
Planar-doped barriers in GaAs by molecular beam epitaxy
1980 · R.J. Malik, T.R. Aucoin, et al. · Electronics Letters · 248
Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAs
1980 · C. E. C. Wood, G. Metze, et al. · Journal of Applied Physics · 242
Tin-doping effects in GaAs films grown by molecular beam epitaxy
1978 · C. E. C. Wood, B. A. Joyce · Journal of Applied Physics · 180
Surface and interface depletion corrections to free carrier-density determinations by hall measurements
1979 · Amitabh Chandra, Colin E.C. Wood, et al. · Solid-State Electronics · 175
The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs
1981 · Y. G. Chai, R. Chow, et al. · Applied Physics Letters · 154
Magnesium- and calcium-doping behavior in molecular-beam epitaxial III-V compounds
1982 · C. E. C. Wood, D. Desimone, et al. · Journal of Applied Physics · 150
Growth of Sb and InSb by molecular-beam epitaxy
1981 · A. J. Noreika, M. H. Francombe, et al. · Journal of Applied Physics · 130
Photoluminescence of AlxGa1−xAs grown by molecular beam epitaxy
1981 · G. Wicks, W. I. Wang, et al. · Journal of Applied Physics · 129
Crystal orientation dependence of silicon autocompensation in molecular beam epitaxial gallium arsenide
1982 · J. M. Ballingall, C. E. C. Wood · Applied Physics Letters · 111
RED intensity oscillations during MBE of GaAs
1981 · Colin E.C. Wood · Surface Science · 111
Arsenic stabilization of InP substrates for growth of GaxIn1−xAs layers by molecular beam epitaxy
1980 · G. J. Davies, R. Heckingbottom, et al. · Applied Physics Letters · 107
Novel refractory semiconductors
1987 · David Emin, T. L. Aselage, et al. · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) · 105
High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence
2000 · D. I. Florescu, V. M. Asnin, et al. · Journal of Applied Physics · 104
Intrinsic linewidths and radiative lifetimes of free excitons in GaAs quantum wells
1992 · Vivek Srinivas, John Hryniewicz, et al. · Physical review. B, Condensed matter · 94
On the origin and elimination of macroscopic defects in MBE films
1981 · C.E.C. Wood, L. Rathbun, et al. · Journal of Crystal Growth · 93
GaInAs-AlInAs structures grown by molecular beam epitaxy
1981 · H. Ohno, C. E. C. Wood, et al. · Journal of Applied Physics · 81
Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAs
1980 · R.A. Stall, C.E.C. Wood, et al. · Electronics Letters · 71
Indium antimonide-bismuth compositions grown by molecular beam epitaxy
1982 · A. J. Noreika, W. J. Takei, et al. · Journal of Applied Physics · 70
A study of Ge/GaAs interfaces grown by molecular beam epitaxy
1981 · R. A. Stall, C. E. C. Wood, et al. · Journal of Applied Physics · 67
Optical, Hall and cyclotron resonance measurements of GaSb grown by molecular beam epitaxy
1988 · G R Johnson, B C Cavenett, et al. · Semiconductor Science and Technology · 66
Ultra low resistance ohmic contacts to n -GaAs
1979 · R. Stall, C.E.C. Wood, et al. · Electronics Letters · 66
Carrier compensation at interfaces formed by molecular beam epitaxy
1982 · N. J. Kawai, C. E. C. Wood, et al. · Journal of Applied Physics · 64
’’Surface exchange’’ doping of MBE GaAs from S and Se ’’captive sources’’
1978 · C. E. C. Wood · Applied Physics Letters · 63
Ballistic electron motion in GaAs at room temperature
1980 · L.F. Eastman, R. Stall, et al. · Electronics Letters · 62
Schottky barrier heights of molecular beam epitaxial metal-AlGaAs structures
1981 · K. Okamoto, C. E. C. Wood, et al. · Applied Physics Letters · 56
Works count: 174
Citation count: 4,131
H-index: 33
I10-index: 73
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